本文着重论述了田口式参数设计法在半导体制造中对线宽的质量控制。
Mainly the author of this essay elaborates that Taguchi parameter design controls the linewidth quality in semiconductor manufacturing.
提出一种具有逻辑时序特征的微粒群优化算法，并将其应用于半导体封装生产线的工序参数优化中。
A kind of particle swarm optimization method with the characteristic of logical time-sequenced is proposed and applied to procedure parameters optimization of semiconductor assembly product line.
基于热电制冷原理和PID参数自整定理论，本论文设计了一种半导体激光器环境的温度控制仪。
Based on the thermoelectric refrigeration principle and PID parameter self-tuning control technique, a temperature controller for semiconductor laser's environment test is designed.
工艺参数的变异导致半导体制造过程的偏差。
The process variation accounts for deviations in the semiconductor fabrication process.
平板显示器中有源元件的参数测试与其他各类半导体器件的IC器件测试相同。
Characterizing the active elements in flat panel displays is similar to IC device testing on other types of semiconductors.
介绍了测量片状小损耗介质介电常数、半导体电导率及非平衡载流子寿命等参数的结果。
The measurement results of complex dielectric constants of low loss and thin flake materials, conductivity and nonequilibrium charge carrier lifetime of semiconductor are introduced.
该系统充分发挥了S3C44B0嵌入式微处理器高性能优势，经调试证明，能够可靠地实现对半导体分立器件的参数测试和分选的功能。
The semiconductor testing system makes full use of the high-powered ARM microprocessor S3C44B0. It is testified that the system can meet the requirement of function.
谱线展宽因子是半导体激光器的重要参数之一。
Linewidth enhancement factor is one of the most important factors of semiconductor lasers.
得到了波长转换效率与半导体光放大器特性参数以及注入泵浦光功率等关系的解析表达式。
An analytic expression is developed describing the relationship between conversion efficiency and the characteristic parameters of SOA and input pump power.
它直接反映了材料的质量和器件特性。能够准确的得到这个参数，对于半导体器件制造具有重要意义。
It reflects the quality of materials and performance of devices, so it is necessary to get this parameter accurately.
通过对模糊神经网络训练，建立干扰和半导体生产线状态等输入参数与优化的重调度策略输出之间的映射关系。
The relation between the input of FNN, such as disturbance, system state parameters, and output of FNN, optimal rescheduling strategy, is built by FNN.
随着半导体器件参数的增加，目标函数的自变量空间维数变得越来越大。
With the increase of the number of parameters in semiconductor devices, the dimensions of space in which the object function exists become larger and larger.
主要研究半导体器件的性能、参数，模拟电子线路的基本原理、分析方法及其计算。
The course mainly talks about the characters and parameters of semiconductors, and the basic principle, analysis method, calculation method of analog electronic circuits.
通过霍尔效应实验测定的霍尔系数，能够判断半导体材料的导电类型、载流子浓度及载流子迁移率等重要参数。
The coefficient of Hall-effect decided by experiment can determine the type of semiconductor materials, the concentration of carrier, the mobility of carrier and other important parameters.
在半导体设备运动过程中，有效的调节数字PID控制参数可以提高设备运动的稳定性和可靠性，利用积分分离的算法来实现具有最佳组合的PID控制。
In the motion of semiconducting equipment, better digital PID control parameters can improve stability and reliability of equipment. Using separate integral arithmetic can get optimal PID control.
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。
This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.
饱和通量，调制深度等是半导体可饱和吸收镜的重要参数。
Saturation fluence and modulation depth are key parameters of SESAM.
本文论述了大功率列阵半导体激光器组侧泵浦YAG激光器的工作原理，在此基础上进行设计、制作并对激光器进行调试和性能参数测量。
The theory of side pumping Nd:YAG laser by high-power array-semiconductor laser cluster are discussed, on the basis of this theory, we design, make and justify the laser, and measure its data.
在半导体芯片制造过程中，结深是重要的工艺参数之一。
The depth of diffusion junction(Xj)is one of the most important parameters in wafer Fab.
本文主要利用第一类方法，对半导体激光器阵列的稳态热阻进行测量，并详细介绍了半导体激光器各个参数的测量方法。
In this article, we used the first method to test the stable thermal resistance, and we introduced some testing methods to test the parameters of semiconductor lasers.
研究了硅衬底导电率变化对金属绝缘半导体传输线的分布电阻和分布电感参数的影响。
Examples are given to illustrate that the change of silicon substrate conductivity affects distributed parameters of MIS transmission line.
文中导出了动态导通比参数、半导体开关管拓扑以及变压器理想模型的对偶形式。
The duality of transformers (ideal and perfect models) is investigated. In addition, the duality relationships of duty ratio parameters and semiconductor-switch topologies are also given.
采用平面选择注入隔离工艺制作MESFET及旁栅电极，通过改变半导体特性测试仪的延迟时间参数，深入研究了不同沟道电流的数据采集时间对旁栅效应迟滞现象的影响。
The influence of different data collection time of channel current on the side gating hysteresis effect is studied by changing the delay time of semiconductor characteristic testing set.
本文分析了当前已有的半导体激光器检测系统的特点和存在的不足，提出了一种能够测量激光器各种参数的测量系统。
The paper analyzed the characters and the disadvantages of the existed LD characteristic detection system and puts forward the main functions of the detection systems.
引线键合过程中的工艺参数较多，他们直接影响键合质量的好坏，影响半导体器件的可靠性。
There are so many process parameters affecting bond quality in wire bonding and these parameters are directly related to the reliability of semiconductor device.
半导体激光器的性能指标主要依靠测量技术来保证，因此对半导体激光器参数的测量具有重大意义和研究价值。
The performance index of LD primarily depends on the testing technology to be ensured. So it is significant and worth studying that testing the characteristics.
通过对基于脉冲激光测距原理的半导体脉冲激光器的参数测量分析，研究了半导体脉冲激光的发射和接收。
The emission and receive of semiconductor pulse laser are researched, based on the laser rangefinder theory, parameter measure and character analyzing of semiconductor pulse laser.
半导体激光器特性参数测量系统由激光器、PC机、LD检测仪和其他仪器组成。
The measurement system of LD was made up of PC and measurement instrument of LD and other measurement devices.
半导体激光器特性参数测量系统由激光器、PC机、LD检测仪和其他仪器组成。
The measurement system of LD was made up of PC and measurement instrument of LD and other measurement devices.
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