• 然后基极7一部分形成包括比如发射极第一导电类型第二半导体8)。

    Thereafter a second semiconductor region (8) of the first conductivity type, comprising, for example, an emitter region, is formed on a part of the base region (7).

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  • 晶体管包括第一导电类型,该漏 极与不同第一半导体第二半导体区连通。

    The transistor also comprises a drain region of the first conductivity type and electrically communicating with a second semiconductor region that differs from the first semiconductor region.

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  • 半导体中的可以限定晶体管栅极长度

    Source and drain regions in the semiconductor may define a transistor gate length.

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  • 本文研究目标实现半导体蚀刻通过自动化反馈控制系统提高生产的自动化程度。

    The goal of this paper is to design and implement a system that use automation feedback control solution to improve the automation integration in semiconductor Etch area.

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  • 电荷存储具有半导体衬底氧化物、薄氧化物层上氮化物层和氮化物层上的绝缘氧化物层。

    Both of the right and left charge storage regions having a thin oxide layer on the semiconductor substrate, a nitride layer on the thin oxide layer and an insulating oxide layer on the nitride layer.

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  • 此外,该多阶栅极结构另包含多个掺杂浓度不同掺杂设置多层阶梯结构下方半导体

    In addition, multilayer staircase type grid structure includes multiple doping sections with different doping densities setup in semiconductor base plate in low part of MSS.

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  • 本文研究半导体表面空间电荷中的能级中心电场增强载流子产生效应

    The field-enhanced carrier generation of deep level centers in semiconductor space charge region has been studied.

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  • 揭示了半导体表面城原子结构对其微纳域表面界面电子特性影响,认识半导体微纳域表面界面电子行为提供思路

    By using the adsorption of gas probe, we can understand the surface or interface electron character of functional semiconductor in micro-nano region in essentially from a new point of view.

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  • 第 一电极接到半导体第二电极邻近沟槽底部位置处电耦接到

    The first electrode is electrically coupled to the semiconductor layer and the second electrode is electrically coupled to the base region, at a location adjacent a bottom of the trench.

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  • 中国成立代表意法半导体公司加强中国市场长期投入,是其为这个全球增长最快的经济取得更大成功迈出的关键一步。

    The establishment of ST Microelectronics R&D (China) Center means ST will enhance long-investments in China market and achieve great success in this fast growing economic zone.

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  • 以及保护布线,贯通上述第二域的上述第一及第二主面的两面而形成上述半导体板,并包围上述至少个贯通电极

    A guard ring is formed in the semiconductor substrate to penetrate the first and second principal faces, the guard ring is surrounding the penetrative electrodes.

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  • 本文数值模拟的方法研究热毛细对流溶质浓度毛细对流的耦合,分析半导体晶体的浮生长过程杂质的影响。

    The axisymmetrie model is used to study numerically the coupling processes of the ther-mocapillary and the solutalcapillary convection in a floating zone.

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  • 半导体器件包括沟槽栅极(32),其通过绝缘层(33)面对部分所述中间

    The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33).

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  • 半导体装置沟道导电性极好而不分子电荷迁移限制并且可以被容易安全地制备

    The channel region of the semiconductor device has high conductivity, unlimited by the charges movement between molecules, and easily and safety prepared.

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  • 本文介绍电子显微术中一些较新的固体特性研究方法及其半导体物理固体物理分支学科中的应用。

    In this paper, the new field of electron microscopy: micro-zone properties of so-lid state such as the optical, electric, magnetic, acoustic property and the deep energy level were shown.

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  • 半导体器件包 括具有有限定有源的器件隔离半导体衬底以及于有源上方电阻

    The semiconductor device includes a semiconductor substrate having an active region and a device isolation region defining the active region, and a resistor string formed over the active region.

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  • 形成在所半导体衬底中的与所述第一导电类型相反第二导电类型

    The semiconductor device includes a semiconductor substrate of a first conductivity type; a well region of a second conductivity type, formed in the semiconductor substrate;

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  • 形成在所半导体衬底中的与所述第一导电类型相反第二导电类型

    The semiconductor device includes a semiconductor substrate of a first conductivity type; a well region of a second conductivity type, formed in the semiconductor substrate;

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