双极结型晶体管，涉及半导体功率器件技术领域。
A bipolar junction transistor relates to the technical field of a semiconductor power device.
PN结构成了几乎所有半导体功率器件的基础，其雪崩击穿电压直接决定了相关器件的工作电压范围。
PN junction is the foundation of almost all the power devices. The avalanche breakdown voltage of PN junction determines the work voltage range of related power devices.
近年来，由于半导体功率器件工艺的进步和成本的降低，微波固态发射机越来越多地为各类微波系统所采用。
Recently, duce to the improvements of semiconductor power device technology's and dropping of costs, more and more solid state transmitters have been adopted by various microwave systems.
该文介绍电力电子技术研究的问题、功率半导体器件、主要应用和新应用。
This paper introduces the research problems, power semiconductors, main and new applications on power electronics.
半导体器件没有灯丝，因此也不需加热功率或加热时间。
Semiconductor devices have no filament or heaters and therefore require no heating power or warm-up time.
在高功率微波作用下，半导体器件的失效问题一直困扰着人们。
The failure of semiconductor due to high power microwave has been puzzling people for a long time.
在目前的中电压大功率应用领域，占主导地位的功率半导体器件有晶闸管、GTO和IGBT等。
Today ordinary thyristor, GTO and IGBT play an important role in the applications of power semiconductor device for medium-voltage, and high power levels.
IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。
IGCT is a kind of high power semiconductor based on GTO structure, which achieves hard turn-off by the integrated gate circuit.
实验中发现，传统结构的光泵浦垂直外腔面发射半导体激光器，随着泵浦功率密度的增加，器件的温升现象严重。
In experiment, it was found that temperature increasing of original OPS-VECSEL is very serious with increasing pumping power a new type of semiconductor laser.
二是正在快速更新的高性能功率半导体MOSFET和IGBT等电力电子器件；
The second is electronic devices of high-performance power semiconductor such as MOSFET and IGBT.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
VDMOS是微电子技术和电力电子技术融和起来的新一代功率半导体器件。
VDMOS is a new generation of power semiconductor devices, the microelectronics and power electronics technology integration together.
公司位于长江和京杭大运河交界处，风景优美，是生产功率半导体器件的理想之地。
The company is located between the Yangtze River and the Beijing-Hangzhou Grand Canal where it is a beautiful and ideal place for manufacture of power semiconductor devices.
真空微电子器件相对于半导体器件来说，有着更高的工作频率和输出功率，正常工作温度范围也相对较大。
Compared with semiconductor devices, vacuum microelectronic devices can work with higher frequency and larger power at a wider range of temperature.
晶闸管属于大功率的半导体器件，决定其允许通过电流大小的标准之一是温度的高低。
Thyristor is a high-power semiconductor device, and the standard of its rated current is temperature.
介绍一种紧凑的、能以较低输入光功率工作的光学双稳器件，由光电检测器、光纤定向耦合器和半导体激光二极管组合而成的。
A compact, low input power optical bistable device, combined with photodetector and optical fiber directional coupler and semiconductor laser diode, was presented.
新型直流输电(VSC - HVDC)技术是指采用全控型功率半导体器件的电压源换流器的直流输电技术。
The newly direct current transmission (VSC-HVDC) technology is refers USES full-controlled semiconductor device, and potential source converter based direct current transmission technology.
解释了有关熔断对整流器和功率半导体器件实现短路保护的原理。
Rectifier and semiconductor short circuit protection principles in respect to fusing are explained.
自关断功率半导体器件在步进电机电源、交流变频电源等电子线路中应用广泛，而烧管子问题严重影响自关断器件工作的可靠性。
Automatic shutoff power semiconductor widely applied in electric circuit such as SM's power, ac variable-frequency power etc. But burning tube often affected its reliability.
功率 半导体 器件的全球销售额每年以约15％的速率增长，而传统器件如SCR和GTR等的年增长率远小于新型 器件。
The annual growth rate of the world-wide semiconductor sales is about 15%, and that of the traditional devices such as SCR and GTR is much less than the new power devices.
功率 半导体 器件的全球销售额每年以约15％的速率增长，而传统器件如SCR和GTR等的年增长率远小于新型 器件。
The annual growth rate of the world-wide semiconductor sales is about 15%, and that of the traditional devices such as SCR and GTR is much less than the new power devices.
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