本文通过实验表明采用电化学淀积法，选择合适的电解质溶液和制备工艺条件，可以在液相中获得类金刚石薄膜。
It is indicated that DLC films can be deposited in liquid phase by choosing appropriate electrolyte and preparing technology by electrodeposition method.
这个高的数值可以和从化学气相淀积外延得到的数值相比拟。
The higher value is comparable to those obtained in CVD epitaxy.
简要概述了脉冲激光蒸发淀积(PLED)和激光诱导化学气相淀积(LCVD)的基本原理、淀积系统和激光器。
The basic principles, deposition systems and laser sources of pulsed laser evaporation deposition (PLED) and laser-induced chemical vapor deposition (LCVD) are simply introduce.
采用气凝胶与干凝胶两种催化剂载体通过化学气相淀积方法制备出螺旋状的碳纳米管。
Helical carbon nanotubes were synthesized by a chemical vapour deposition method from both silica aerogels and silica xerogels containing catalysts.
仿真和实验表明，这种复合控制的方法能有效地改善金属有机化合物化学气相淀积系统温度的控制性能。
The results of the imitation experiments show that the method of the compound control can be used to improve the control performance of the system temperature for MOCVD effectively.
采用光化学气相淀积(光cvd)氮化硅薄膜进行器件的表面钝化，使整个器件提高了可靠性。
The devices were passivated by the thin film of Photo-CVD silicon nitride, we found that the reliability of the devices was to be raised.
砷化三氢的反应是典型的掺杂化学反应，图9显示了该反应的淀积过程。
Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in Fig. 9.
首先优化设计了器件结构，并利用金属有机物化学气相淀积（MOCVD）进行了器件的外延生长。
The device structure is optimized firstly, then the structure is grown by metal organic chemical vapor deposition (MOCVD).
首先优化设计了器件结构，并利用金属有机物化学气相淀积（MOCVD）进行了器件的外延生长。
The device structure is optimized firstly, then the structure is grown by metal organic chemical vapor deposition (MOCVD).
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