研究了直流等离子体化学汽相沉积（CVD）法合成的金刚石膜内应力随甲烷浓度、沉积温度的变化关系。
The internal stress in diamond thin films deposited by DC plasma CVD was studied as a function of methane concentration and deposited temperature.
本文采用PM3方法，计算了化学汽相沉积金刚石薄膜成核与生长阶段反应势垒。
Using a semi empirical quantum mechanical method (PM3), we calculated the potential barriers of reactions of chemical vapor deposition (CVD) diamond films on Si(111) substrate.
本文采用PM3方法，计算了化学汽相沉积金刚石薄膜成核与生长阶段反应势垒。
Using a semi empirical quantum mechanical method (PM3), we calculated the potential barriers of reactions of chemical vapor deposition (CVD) diamond films on Si(111) substrate.
应用推荐