采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).
等离子体化学气相沉积技术制备氢化硅薄膜工艺条件成熟稳定而成为薄膜制备的首选方法。
Plasma enhanced chemical vapor deposition (PECVD) technique is the primary method which is used to prepare hydrogenated silicon film.
采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池。
Microcrystalline silicon solar cells with the variation of silane concentration (SC) and discharge power were fabricated by very high frequency plasma-enhanced chemical vapor deposition.
MOCVD是金属有机化学气相沉积技术的简称，即通过MOCVD设备，在衬底上生长材料晶体的一种方法。
MOCVD stands for Metalorganic Chemical Vapor Deposition, is one technology used to grow wafers from underlay with the MOCVD equipment.
MOCVD是金属有机物化学气相沉积技术的简称，即通过MOCVD设备，在衬底上生长材料晶体的一种方法。
MOCVD is an abbreviation form for Metal Organic Chemical Vapor Deposition, which is a method used to grow material crystal on substrate via MOCVD device.
首次以电沉积铁为催化剂，采用经典化学气相沉积技术在石墨基体上成功实现纳米碳管的直接生长，大部分纳米碳管具有“Y”形结构。
Carbon nanotubes (CNTs) grown directly on graphite substrate are fabricated firstly using electrodeposited iron particles by chemical vapor deposition. Most of CNTs have "y" junction structure.
利用电子回旋共振（ECR）微波等离子体辅助化学气相沉积技术、工作气氛为丙酮，在光学玻璃衬底上得到了光滑、致密、均匀的类金刚石薄膜。
Smoothing, dense and uniform nano crystalline diamond like carbon films are prepared by using electron cyclotron resonance (ECR) microwave acetone plasma chemical vapor deposition (CVD) method.
提出了一种新颖的多孔硅表面钝化技术，即采用微波等离子体辅助的化学气相沉积（MPCVD）方法在多孔硅上沉积金刚石薄膜。
A novel passivation technology of porous silicon (PS) surface, i. e. , depositing diamond film on the PS surface by microwave plasma assisted chemical vapor deposition (MPCVD) method, was developed.
本文主要介绍化学气相沉积(CVD)技术应用于冷拔模具以及采用该技术的模具在制作过程中的几个问题。
This paper mainly introduces application of chemical vapour deposition (CVD) technology to the cold-drawn dies and relevant methods to make dies by using this technology.
课堂讲授和实验课重点介绍了基本制程技术，如扩散、氧化、光刻、化学气相沉积等。
Lectures and laboratory sessions focus on basic processing techniques such as diffusion, oxidation, photolithography, chemical vapor deposition, and more.
本文介绍了化学气相沉积制膜技术在国民经济各个领域中的应用及其发展趋势。
The article has introduced the application and development tendency of techniques of film making with chemical vapor deposition in all fields.
传统等离子体增强化学气相沉积(PECVD)技术，工艺成熟，制备的薄膜质量高，较适合大规模工业化生产。
For the high technical maturity and the high deposition quality, traditional plasma enhanced chemical vapour deposition (PECVD) technology was wide applied in the large-scale industrial production.
评论了国内外化学气相沉积的异质外延金刚石膜制备技术、性质表征以及应用和展望。
The major aspects of the recent development in the growth, characterization and applications of the hetero epitaxial diamond films by chemical vapor deposition were reviewed.
评述了化学气相沉积金刚石薄膜衬底表面预处理技术的进展情况。
The progress of pretreatment techniques of substrate surface for CVD diamond film was reviewed.
陶瓷薄膜的制备技术多种多样，如物理气相沉积、化学气相沉积、高温烧结和“溶胶-凝胶”法等。
There are many techniques for fabricating ceramic films such as PVD, CVD, high-temperature sintering and sol-gel method.
利用螺旋波等离子体化学气相沉积(HWP - CVD)技术，以氢气为反应气体产生等离子体。
The hydrogen plasma was excited by the technology of helicon-wave plasma chemical vapor deposition (HWP-CVD).
金属有机化学气相沉积(MOCVD)是一门制备薄膜材料的关键技术。
Metal Organic Chemical Vapor Deposition (MOCVD) is a key technology in growing thin-films.
本文介绍了化学气相沉积，物理气相沉积等表面涂层技术在切削刀具中的应用现状与发展趋势。
This paper introduces the chemical vapor deposition, Physical vapor deposition coating technology in the cutting tools of the status and development trend.
综述了热障涂层研究及应用中的几种主要制备技术，包括等离子喷涂、电子束物理气相沉积、离子束辅助沉积、化学气相沉积等。
In this paper, prevailing TBC deposition technologies, including plasma spray, electron beam-physical vapor deposition, ion beam assisted film deposition and chemical vapor deposition, are reviewed.
以乙酰丙酮铱为前驱体，采用金属有机化合物化学气相沉积(MOCVD)技术在钼基体上制备了铱薄膜。
Ir films were prepared by metal-organic chemical vapor deposition (MOCVD) method using iridium tri-acetylacetonate precursors on molybdenum substrates.
该膜采用基板超声预处理，在优化工艺条件下人工化学气相沉积等技术措施制备。
The said coating uses supersonic pretreatment of basilar plate and is prepared by the technical measure of artificial chemical gas-phase sedimentation.
以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。
Without doping, plasma enhanced chemical vapor deposition (PECVD) of silica films on si substrates with gas mixtures of SiH_4 and N_2O is considered.
继而提出采用负催化剂和化学沉积气相技术抑制溶损反应，降低焦炭反应性，提高反应后强度的有效新途径。
The further study is finding new approaches aimed to improve coke thermal properties of existing metallurgical cokes and upgrade low-grade by enhancing its resistance to oxidation with CC>2.
继而提出采用负催化剂和化学沉积气相技术抑制溶损反应，降低焦炭反应性，提高反应后强度的有效新途径。
The further study is finding new approaches aimed to improve coke thermal properties of existing metallurgical cokes and upgrade low-grade by enhancing its resistance to oxidation with CC>2.
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