通过交流和直流反应溅射，我们以硅基片（表面上有白金加热电极）为基底制作H_2S气敏元件。

Through the technology of RF and DC reactive sputtering manufacture, H2S gas sensors have been developed on silicon substrate on which a heater made of Pt were attached.

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由于加热电阻和电极及气敏层紧密的依次附着在隔热性能优异的衬底上，使得本发明的加热电阻的功耗明显降低。

And the heating resistance, electrodes and gas sensitive layer are tightly contacted on the liner with better thermal insulation ability to reduce the power consumption of the heating resistance.

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由于加热电阻和电极及气敏层紧密的依次附着在隔热性能优异的衬底上，使得本发明的加热电阻的功耗明显降低。

And the heating resistance, electrodes and gas sensitive layer are tightly contacted on the liner with better thermal insulation ability to reduce the power consumption of the heating resistance.

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