大功率晶体管驱动不受高频影响。
High-power transistor drive is not affected by high frequencies.
概述了双极功率晶体管二次击穿机理。
Second breakdown mechanisms of bipolar power transistor is summarized.
功率晶体管通常封装在金属外壳中加以保护。
The power transistors are generally encased in metal for protection.
介绍了对某型号高频大功率晶体管进行的失效分析。
In this paper, the failure analysis of a type of high frequency power transistor is introduced.
首次采用多晶硅发射区RCA技术制备出微波功率晶体管。
A polysilicon emitter RCA microwave transistor was fabricated to fit the power application for the first time.
本文总结、分析了几种大功率晶体管(GTR)的过载保护方案。
The plans for overload protection of several giant transistors (GTR) are summarized and analyzed in this paper.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
本设计的目的是建立一个用于宽带固态放大器的宽带微波功率晶体管。
The objective of this design is to a broadband microwave power transistor used in broadband solid state amplifier.
提出了利用PNP型功率晶体管来扩展集成电源器件输出电流的方法。
Introduces a good way that capitalizes power transistors of PNP pattern to amplify output current.
本文介绍两步硼扩散工艺，它对改善台面功率晶体管的性能极有帮助。
This paper introduces two steps B-diffusion technology, rt is very helpful to improve the properties of mesa power transistors.
据此理论模型研制成功了电流增益温度特性优良的中小功率晶体管系列。
Based on the theoretical model, a new type of the transistor with low temperature coefficient of the current gain has been manufactured successfully.
根据调查结果，它控制的功率晶体管q1和Q2，关闭多余的发电面板分流。
According to the result, it controls the power transistors Q1 and Q2, which shunt off the excess power generation from the panel.
我们的射频功率晶体管系列主要取代了摩托罗拉，飞利浦，汤姆逊和SGS的。
Our line of RF power transistors primarily replaces those from Motorola, Philips, and SGS Thomson.
本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性三极管、场效应管等。
The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
介绍了因单个高频大功率晶体管输出能力有限而采用多管并联运用(积木式)的方法。
Introduced the method of multi-transistor modular design, for the output ability are limited in single high-frequency power transistor.
发电机突然三相短路会导致励磁系统大功率晶体管的损坏，必须对该现象进行分析和研究。
The high-power transistor of exciter will be damaged after the 3-phase circuits' sudden short, which results in starving for the analysis and study of the phenomenon.
本文介绍PAM、PWM复合控制原理和按此原理研制的大功率晶体管宽调速交流调速系统。
The principle of PAM PWM compound control and the power transistor AC adjustable speed system based on that principle are presented in this paper.
如果你打算建立一个真正的大系统，你可能想添加一个U1A和功率晶体管之间的射极跟随器。
If you intend to build a really large system, you may want to add an emitter follower between U1A and the power transistors.
本文对功率晶体管(GTR)正偏二次击穿测试仪的研制进行了说明，并给出了主要技术参数。
The development of the test instrument for forward-biased second breakdown for characteristics of power transistors (GIR) is described and main parameters are given.
此处采用光电器件作为位臵传感器，以三只功率晶体管v 1、V2和V3构成功率逻辑单元。
Optoelectronic devices used here as a position sensor to three power transistors V1, V2 and V3 constitute a logical unit power.
但是它的一个固有缺陷是功率晶体管截止期间变压器必须磁复位，因而需要采用附加的复位电路。
One inherent limitation of the forward converter is that the transformer must be reset during the power transistor off period. Thus, additional reset circuitry has to be used.
分析了一种新颖的零电压零电流(ZVZCS)开关之电平变换器，以及功率晶体管的驱动电路。
A novel zero-voltage and zero-current switching (ZVZCS) three-level converter, and the drive circuit of the transistor were analyzed.
本文对双极性微波功率晶体管(以下简称微波功率晶体管)求解了稳态工作条件下的三维热传导方程。
The three-dimensional heat conduction equation for steady state operating conditions of bipolar microwave power transistors has been solved.
结果指出，即使用常规工艺制造技术把VVMOS功率晶体管相容集成到NMOS电路中去亦是可能的。
The estimated values agree quite well with tests and the results indicate that VVMOS power FET is compatible with NMOS integrated circuits even by conventional processing technology.
为了在试验周期中了解晶体管的结温，提出一种在功率晶体管稳态工作寿命试验过程中结温的测量与控制方法。
A method for measuring and controlling the junction temperature of power transistor during succession operation life test is proposed.
本发明公开一种半导体功率组件，其包括若干功率晶体管记忆胞，该记忆胞被开设于一半导体衬底中的沟槽所围绕。
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate.
然后有功率晶体管2N3055数进行驱动线圈变压器变换电压给高上去交流220V50Hz的电力约100瓦不超过。
Then Have Power Transistor 2N3055 Numbers Perform To Drive Coil Transformer For Converter Voltage Give Tall Go Up 220V AC 50HZ At The Electric Power About 100 Watt Not Exceed.
分析了实现大功率晶体管（GTR）快速保护的途径，提出了一种GTR的快速保护电路，尤其对检测电路作了详细的讨论。
This paper analyses the ways to realize rapid protection of GTR and presents a practical rapid protection circuit. The detector circuit is discussed in detail.
通过大功率晶体管（GTR）对驱动电路的要求，利用集成电路UAA4002设计了一种稳定性和可靠性高的理想驱动电路。
This paper introduces the giant transistor (GTR) ' s requirement for drive circuits, using integrated circuit UAA4002 designed a drive circuit of reliable and good performance.
长期以来，解决微波功率晶体管的电流集中问题的通用做法是使用发射极镇流电阻，以及PTC,CTR热敏电阻等无源器件。
For a long time, a common and popular method to solve current convergence problem of microwave power transistor is using emitter ballasting resistor, such as PTC, CTR thermistor, passive devices etc.
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