大功率器件的失效主要是由热问题引起的。
器件包括常用的传感器、功率器件、微控制器及电子元件。
The devices are composed of frequently used sensors, power device, micro-controller and electric components.
IPM是一种将驱动和保护电路集成于一体的智能功率器件。
IPM is an intellectual power appliance in which the driving circuit is integrated with the protective circuit.
功率器件以使用双极晶体管为主，今后使用IGBT会逐渐增多。
Double pole transistor in power device is major and the apply of IGBT will be more and more.
利用非线性散射函数可以完成对大信号射频功率器件的精确建模。
The nonlinear scattering function can build accurate model of RF power components under large signal.
功率器件的电压过冲和电压变化率可以通过缓冲电路来进行抑制。
The voltage overshoot across the power electronics and the voltage variation could be suppressed by snubber.
介绍了对微波功率器件开展的动态加速寿命试验方法和技术的研究。
This paper introduces the study on dynamic lifetime testing technology of power microwave devices.
功率器件寄生电容的大小直接关系到平板显示器驱动芯片的功耗及性能。
The parasitical capacitances of power devices greatly influence the power dissipation and performance of driver ICs for flat panel display.
本文对功率器件的选择进行了说明，并且设计了相应的驱动电路的参数。
The choice of power semiconductor is introduced and the according driving circuits are designed.
这些结果对高速功率器件寿命工程研究和器件制造工程都有重要的参考价值。
These results have an important reference value on the research of the lifetime engineering for high-speed power device and device manufacture engineering.
主电路采用交—直—交电压源型变频器，功率器件采用智能功率模块IPM。
Main circuit adopts the AC-DC-AC structure and uses IPM(Intelligent Power Module) as main switch.
分析了变频器主功率器件IGBT的死区时间对其输出电压、输出电流的影响。
The influence of dead time of power device IGBT on inverter's output current and output voltage is discussed.
雷达发射机中大功率器件(如速调管)的强迫液体冷却是一种常用的冷却方式。
Forcing liquid cooling for high power devices (such as klystron) in-radar transmitter is a common cooling method.
在进行相关分立器件分析时发现，稳态热阻对功率器件寿命试验结果影响较大。
The steady state thermal resistance has important influence on the life test by researching the discrete semiconductor devices.
针对工业电源恶劣的工作环境，对工业电源小功率器件的散热设计进行了探讨。
This article discusses the thermal design of miniwatt semicondutors in industrial power, which works in terrible environments.
功率器件采用智能功率驱动模块，其内置的保护电路大大提高了系统的可靠性。
The Intelligent Power Module is been used for power instrument, its inner protect circuit raise reliability of the system.
采用新型大功率器件IGBT研制了一台幅压供电直流电动机无级无触点起动器。
A stepless and contactless IGBT starter for amplitude voltage DC motor has been manufactured.
在回流动力学理论和实验研究的基础上，将回流加固结构应用于实际微波功率器件。
A novel structure has been designed and applied in metallization system of microwave power device, in which backflow effect is taken to increase the electromigration resistance.
试验结果表明，软开关技术能够有效地改善功率器件的工作环境，明显地降低损耗。
The experimental results show that soft switch technology can effectively improve work environment of power converter and greatly decrease its power consumption.
利用大功率器件、逆变技术和PWM集成控制器，构成了一种新型的弧焊逆变电源。
There is a new- style arc- welding inverter, using powerful component and invert technique and PWM integrated controller.
本文介绍了用单片机8031，8255等芯片和一些功率器件组成的自动控制系统。
This article present are automatic control system that consists of singlechip microcomputer 8031,8255 and power devices etc.
研究了开关电源中印刷电路板寄生参数及功率器件瞬态特性产生的传导电磁干扰现象。
Conducting Electromagnetic Interference (EMI) in switching power supplies caused by parasitic parameters and transient characteristic of power electronic elements is studied in this paper.
针对电子设备中高功率器件的热设计问题，介绍了一种实用的强迫风冷散热设计方法。
Aiming at the thermal design problem of high-power components in electronic equipments, this paper introduces one practical thermal design method of forced air cooling of electronic equipment.
嵌入式系统往往工作频率高、环境恶劣、含有功率器件，电磁兼容问题的处理尤其重要。
Embedded system usually has high work frequency in the foul environment, contains the power parts of an apparatus, so the disposal of electromagnetic compatibility problems are very important.
利用通道功率合成技术原理，采用魔T这一大功率器件，可以在射频通道上合成更高功率。
High power device of magic-T is adopted with channel power combination technique principle.
通过相关案例分析，提出稳态热阻的变化量应作为功率器件寿命试验合格判据之一的建议。
This paper suggests that the change of the steady state thermal resistance should become one of the criterions of the life test.
首次对薄膜SOI功率器件的击穿电压与线性掺杂漂移区的杂质浓度梯度的关系进行了实验研究。
The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.
该功率器件的版图设计为圆形结构，避免了球面结的形成，有效的降低了曲率效应造成的电场集中。
In the layout design of the power device, a circular structure was adopted to avoid the spherical junction and reduce the curvature effect.
本文介绍了带有低压MOSFET或高压igbt功率器件的SKAI汽车动力系统的性能和应用。
The article introduces the performance and application of the SKAI automobile power system with low-voltage MOSFET or high-voltage IGBT power component.
在功率集成电路中，高压功率器件会对周围的低压电路产生串扰，从而造成电路失效甚至闭锁等现象。
In power IC, crosstalk between high voltage power devices and low voltage devices can cause circuit operation failure and even latch-up.
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