剂中的材料都具有一定的刻蚀速率。
More often , all of the materials etchant have a finite etch rate.
通过调整工艺条件，可严格控制刻蚀速率。
The etching rate can be strictly controlled by adjusting technological conditions.
再继续增加射频功率、压力，刻蚀速率反而会下降。
If the RF power, pressure are continued to increase, the etching rate decrease.
通常，所有暴露在刻蚀剂中的材料都具有一定的刻蚀速率。
More often, all of the materials exposed to the etchant have a finite etch rate.
结果表明，刻蚀速率与刻蚀气体的混合比率呈现非单调特性。
Results indicate that etching rates of BST thin films present non-monotonic dependence on mixing ratio of etching gases.
给出了刻蚀速率与激光能量密度的关系，并对实验结果进行了分析。
The relationship between ablation rate and laser fluence was showed and the experimental results was analyzed.
研究还发现，不同垫层（塑料片、钢片和铝板）导热性能对刻蚀速率影响很小。
Meanwhile, the difference in thermal conductivity of underlining materials (plastic sheet, steel sheet and aluminium plate) has little effect on the etching rate.
随着刻蚀深度的增加，光解生成物的脱出变得困难，从而导致刻蚀速率的降低。
With the increase of etching depth, the generated particles are difficult to escape from micro-structures, causes so that the ablation rates decreases.
结果表明刻蚀气体的组分和射频偏压对刻蚀速率有较大影响，而气体流量影响不大。
The results show that the etching rate depends strongly on plasma composition and the RF bias voltage, but rather weakly on the gas flow rate.
分析了真空压力、射频功率、气体组合及其流量和电极温度对刻蚀速率、刻蚀剖面的影响；
The dependence of etching rate and profile on the vacuum pressure, RF pow-er, gas composition and flow rate, and electrode temperature is analyzed.
在直流功率一定时，工作气压的降低会导致刻蚀速率的增加，并且刻蚀由各向同性转变为各向异性。
When remains the DC power, the decreasing of gas pressure can lead to the increasing of etching rate and the transformation from isotropic etching to anisotropic etching.
对二氧化硅反应离子刻蚀中反应室压力，刻蚀气体流量和射频功率等因素对刻蚀速率和刻蚀均匀性的影响进行了研究。
The influence of chamber pressure, gas flow rate and RF power on micro loading effect in reactive ion etch of silicon dioxide is researched.
同时给出了刻蚀深度与脉冲速率及脉冲时间的实验曲线。
Experimental curves of etching depth versus repeated rate and radiation time of laser pulse are given.
同时给出了刻蚀深度与脉冲速率及脉冲时间的实验曲线。
Experimental curves of etching depth versus repeated rate and radiation time of laser pulse are given.
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