通过深紫外光刻和感应耦合等离子刻蚀设备,制备了所设计的器件。
The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.
目前,刻蚀技术已经成为集成电路生产中的标准技术,干法刻蚀设备亦成为关键设备。
Now etching has be-come the standard technology, and etching equipment is the key equipment in IC production.
目前,刻蚀技术已经成为集成电路生产中的标准技术,干法刻蚀设备亦成为关键设备。
Now etching has be-come the standard technology, and etching equipment is the key equipment in IC production.
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