结果表明，刻蚀速率与刻蚀气体的混合比率呈现非单调特性。
Results indicate that etching rates of BST thin films present non-monotonic dependence on mixing ratio of etching gases.
用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。
The optical emission spectrum of r. f. plasma during amorphous silicon based film etching in CF4 gas is detected.
结果表明刻蚀气体的组分和射频偏压对刻蚀速率有较大影响，而气体流量影响不大。
The results show that the etching rate depends strongly on plasma composition and the RF bias voltage, but rather weakly on the gas flow rate.
对二氧化硅反应离子刻蚀中反应室压力，刻蚀气体流量和射频功率等因素对刻蚀速率和刻蚀均匀性的影响进行了研究。
The influence of chamber pressure, gas flow rate and RF power on micro loading effect in reactive ion etch of silicon dioxide is researched.
结果表明，通过对反应室压力、刻蚀气体流量和射频功率的调节，可以降低微负载效应的影响，得到良好的刻蚀均匀性。
It is proved that the uniformity of etch rate can be improved and the effect of micro load can be decreased by adjusting the value of chamber pressure, gas flow rate and RF power properly.
随着气体流量的增加，刻蚀速度不断降低。
With the increase of flow of the gas, the etching rate decreases continually.
分析了真空压力、射频功率、气体组合及其流量和电极温度对刻蚀速率、刻蚀剖面的影响；
The dependence of etching rate and profile on the vacuum pressure, RF pow-er, gas composition and flow rate, and electrode temperature is analyzed.
源气体及组分的选择是硅槽刻蚀技术的关键因素。
Correct selection of source gases and their compositions is one of the critical factors for si trench etching.
源气体及组分的选择是硅槽刻蚀技术的关键因素。
Correct selection of source gases and their compositions is one of the critical factors for si trench etching.
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