在湿法刻蚀诱导坑时，需适当延长刻蚀时间。
随着刻蚀时间的增加，多孔硅孔隙率增加，拉伸应力进一步增加。
With the increasing of time, the porosity of porous silicon also increases.
同时给出了刻蚀深度与脉冲速率及脉冲时间的实验曲线。
Experimental curves of etching depth versus repeated rate and radiation time of laser pulse are given.
本发明与传统的方法相比，缩短了刻蚀的时间，提高了刻蚀工艺的效率，电阻条边缘整齐，图形质量高。
Compared with traditional technology, the present invention has the advantages of shortened etching time, raised etching efficiency, regular edge of resistance stripes and high graph quality.
运用相位掩模法刻蚀光纤光栅，该方法对光源的时间相干性和单色性要求较低，工艺简单，成品率高。
Fiber grating is manufactured by application of phase mask means, which is of low requirement of time coherence and monochromaticity for light-source, simple craft and high rate of finished products.
现有的刻蚀形成金属线时的第三阶段刻蚀采用了固定时间的刻蚀，极易造成金属层刻蚀不足或过刻蚀的问题。
The third stage etching in current method is a time-fixed etching, which easily causes under etching or over etching of the metal layer.
现有的刻蚀形成金属线时的第三阶段刻蚀采用了固定时间的刻蚀，极易造成金属层刻蚀不足或过刻蚀的问题。
The third stage etching in current method is a time-fixed etching, which easily causes under etching or over etching of the metal layer.
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