提出了一种基于软刻蚀技术的复制和集成新工艺。
A new replication and integration techniques based on soft lithographical method are presented.
源气体及组分的选择是硅槽刻蚀技术的关键因素。
Correct selection of source gases and their compositions is one of the critical factors for si trench etching.
等离子体低温刻蚀是一种针对高深宽比结构的干法刻蚀技术。
High aspect ratio structures have been successfully fabricated by plasma cryo-etching on silicon wafers.
对硅的干法刻蚀技术是现代半导体工业中非常重要的一项工艺。
Dry etching technique of silicon is a very important process in the modern semiconductor industry.
更精细的刻蚀技术可以孕育更高性能的微芯片，而这仅仅是开始。
Finer etching begets higher-performing microchips, and that's just a start.
摘要 ：总结了大尺寸衍射光学元件离子束刻蚀技术的研究进展。
Abstract : Ion beam etching technologies for developing large aperture Diffractive Optical Elements (DOEs) were reviewed.
利用并行直写技术与感应耦合等离子刻蚀技术制作了部分二元光学元件。
Some binary optical elements were manufactured by parallel direct writing and inductive couple plasma etching technology.
模拟结果为用PS球刻蚀技术制备金属纳米孔阵列的实验提供了理论支持。
The simulation results provide a theoretic guide for the fabrication of metallic nano-hole array by PS sphere's etching and vacuum depositing technology.
首先，采用紫外光刻和化学湿法刻蚀技术在玻璃基片上加工微米深度的微通道；
The microchannels were firstly constructed on a glass substrate by standard UV photolithography and wet etching technique.
提出了优化实验参数、增加束掩模和利用刻蚀技术三种改善原子光刻实验的方法。
Three solutions of optimization of experimental parameters, adding beam mask and using etching technologies for improving atom lithography quality are presented.
文章综述了扫描探针刻蚀技术的最新研究进展，并介绍了扫描探针刻蚀加工机理。
This paper summarized the current development of scanning probe lithography and introduced the mechanisms of forming nanometer structure.
目前，刻蚀技术已经成为集成电路生产中的标准技术，干法刻蚀设备亦成为关键设备。
Now etching has be-come the standard technology, and etching equipment is the key equipment in IC production.
制备金属光子晶体方法包括：电子束刻蚀结合后续剥离法、激光干涉光刻结合干刻蚀技术等。
The fabrication methods of MPC include electron beam lithography with subsequent evaporation and lift-off, interference lithography with dry-etching technology etc.
采用感应耦合等离子体刻蚀技术实现了不同形状和几何参数的规则织构化硅片表面的构筑与制备。
Regular textured silicon surfaces with various shape and different geometrical parameters were successfully designed and prepared using inductively coupled plasma (ICP) etching technology.
并且采用湿法刻蚀技术，制备了该结构的LED芯片，测试得到该种LED芯片出光效率较之普通LED芯片提高了33%。
Then the LED of this kind of structure is gotten by means of wet etching, and its efficiency increases by 33% compared with normal LED.
在薄膜沉积和离子束刻蚀技术中，通常要给绝缘基片加上一个射频或脉冲电极，以便在绝缘基片上形成一个自偏压来控制轰击到绝缘基片表面的离子能量。
Self-bias voltage of the dielectric substrate surface and voltage of the driven electrode were experimentally studied to improve the energy control of impinging ion in plasma processes.
通过纳米制备技术研究者在氮化硅中刻蚀出许多空洞以构成所需图案，使得波导具有合适的隐形折射率。
Using nanofabrication techniques, the researchers etched tiny holes into the nitride to make a desired pattern, giving the waveguide the cloaking refractive index profile.
通孔技术需要能满足对轮廓形状的控制(包括控制倾斜度、形状、粗糙度、过刻蚀等)，同时又要求工艺能具有可靠性、实用性和重复性，最后，成本也要能被合理控制。
Through via technology should satisfy control requirement of outline, including tilt, shape, roughness, over-cut, and so on. The reliability, usability and duplication should be satisfied.
综述了二元光学元件的常用制作工艺技术，包括台阶刻蚀法、薄膜沉积法、直接写入法、准分子激光加工法和灰阶掩模法。
The common fabrication technologies of binary optical elements were expatiated, including etching, thin-film deposition, direct writing, excimer laser projection and gray-scale masks.
在几种不同材料的试件表面刻蚀出了试件栅，这种技术的实现使云纹干涉法和精细网格法在高温高压环境下的广泛应用成为可能。
The realization of this teChnique makes it possible to apply the Moire interferometry and lattice method under high-temperature, high-pressure environments.
综述了亚微米、深亚微米干法刻蚀和相关技术的最新进展及其在超大规模集成电路制造中的应用。
The latest advance of the dry etching for submicron fabrication in ULSI production and interrelated technology are introduced.
采用无刻蚀低温镀铁技术，研究电流密度对铁镀层主要性能的影响。
The effects of current density on the main properties of iron coating were investigated by using low-temperature iron plating technology without pre-etching.
本文简要介绍了微波ECR等离子体技术的原理，评述了近年来这种技术在CVD、PVD、刻蚀等方面的研究和应用的进展。
Principles of microwave ECR plasma technology are introduced briefly. Present development of it'S research and applications in system manufacturing, CVD, PVD and etching is reviewed.
系统介绍了芯片实验室的各种制备技术，这些技术包括紫外光刻、软刻蚀、LIGA技术、DEM技术、键合等。
Some polymer materials are used as substrate. Kinds of new microfabrication technology are presented, including lithography, soft etching, LIGA, DEM and bonding, etc.
衍射光学元件的制作技术主要包括激光或电子束直写、反应离子刻蚀、离子束铣及薄膜沉积。
DOE's fabrication techniques mainly include laser beam or electron beam writing, RIE, ion milling and thin film deposition.
本文提出了一种基于“沾笔”纳米刻蚀和电化学还原技术在表面上制备金属及半导体纳米结构的普适性方法。
A general approach for fabricating metallic and semiconducting nanostructures has been developed based on "dip pen" nanolithography combined with electrochemical reduction of water soluble salts.
新兴的3d互联技术以及高产量的MEMS应用需要成本低廉以及高产量的深层反应离子刻蚀系统。
Emerging 3d interconnection technologies and high volume MEMS applications require cost effective mass production DRIE systems.
提出一种基于等离子体刻蚀的技术，形成减反射表面结构。
A technology based on plasma etching has been developed to produce antireflective surface structures.
本发明属于微电子技术领域，具体公开了一种刻蚀铜的方法。
The invention belongs to the technical field of microelectronics, and in particular discloses a method for etching copper.
本发明属于微电子技术领域，具体公开了一种刻蚀铜的方法。
The invention belongs to the technical field of microelectronics, and in particular discloses a method for etching copper.
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