为了对颗粒表面进行改性，在自行设计组装的流化床反应器中，利用化学气相沉积法(CVD)制备了不同的复合颗粒。
In order to modify the surface properties of the particles, composite particles are prepared by the process of Chemical Vapor Deposition (CVD) in a fluidized bed reactor.
本工作利用热丝化学气相沉积(HFCVD)法获得了(100)取向不同质量的金刚石薄膜，并制备了CVD金刚石辐射探测器。
In present work, (100) oriented CVD diamond films with different quality obtained by a hot-filament chemical vapor deposition (HFCVD) technique were used to fabricate radiation detectors.
本文利用热灯丝化学气相沉积法(HFCVD)制备了纳米量级的碳薄膜材料，对它的电学性质及场发射性质进行了详细的研究。
In this dissertation, extensive researches on the electrical and field emission properties of nano-carbon films prepared by hot filament chemical vapor deposition (HFCVD).
以镍片为基板材料，利用微波等离子体化学气相沉积法在低温条件下合成了纳米碳管膜。
Carbon nanotube films were synthesized on Ni substrate by microwave plasma chemical vapor deposition at low temperature.
之后，利用氨气等离子体促进化学气相沉积法对上述经电镀制程而形成的电镀金属层进行退火处理。
Finally, annealing process is carried out in the electroplated metal layer formed by the electroplating process through chemical vapor deposition method under promotion of ammonia plasma.
本课题利用化学气相沉积(CVD)和热蒸发法在硅片称底和多孔氧化铝(aao)模板上制备纳米硅线。
Silicon nano-wires (SiNWs) were fabricated on Anodized Aluminum Oxide (AAO) template and silicon chips by the Chemical vapor Deposition (CVD) and thermal evaporation method.
本课题利用化学气相沉积(CVD)和热蒸发法在硅片称底和多孔氧化铝(aao)模板上制备纳米硅线。
Silicon nano-wires (SiNWs) were fabricated on Anodized Aluminum Oxide (AAO) template and silicon chips by the Chemical vapor Deposition (CVD) and thermal evaporation method.
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