环形波导内侧开有多个狭缝用来激励产生等离子体。 利用该源研究了气压对等离子体参数、击穿功率和熄灭功率的影响。
The source has been used to study the effect of pressure on argon plasma parameters and microwave power for plasma ignition and extinction.
结果表明，脉冲co 2激光功率密度经三次反射激光聚焦系统达到空气击穿阈值，实验中观察到等离子体发光现象。
The results show: pulse power density from CO2 laser reaches air breakdown threshold through thrice reflecting focus system, and plasma radiation phenomena is observed in the experiment.
概述了双极功率晶体管二次击穿机理。
Second breakdown mechanisms of bipolar power transistor is summarized.
水介质由于具有介电常数大和击穿场强较高的特点，普遍应用于高功率脉冲调制器作中间储能介质。
Water dielectric, because of its great dielectric constant and high breakdown stress, is extensively used as the energy storage medium in high power pulse conditioning system.
在重点考虑了提高击穿电压和增大电流容量的基础上，设计并研制出功率型dubat。
The power dual base transistor (DUBAT) has been designed and fabricated by increasing the breakdown voltage and current capacity of the device.
快脉冲下液体绝缘介质击穿特性是脉冲功率技术应用的基础。
The short-pulsed liquid dielectric breakdown characteristic is the basis of the application of pulse-power technique.
首次对薄膜SOI功率器件的击穿电压与线性掺杂漂移区的杂质浓度梯度的关系进行了实验研究。
The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.
为提高硅平面大功率管的成品率和可靠性，提出了一种刻蚀槽和低温钝化相结合的克服低击穿的硅平面枝术。
Silicon plane technique with etching groove and low temperature passivation is proposed to overcome low-breakdown for increasing the finished product rate and reliability of the plane powerful tube.
论文对气体击穿现象进行了理论分析，最终确定出与微波输出功率相对应的最佳工作真空度，避免气体击穿现象的发生。
In this paper this phenomenon is analyzed theoretically, and finally the best vacuum degree in correspondence with different microwave power is found out to avoid this phenomenon.
PN结构成了几乎所有半导体功率器件的基础，其雪崩击穿电压直接决定了相关器件的工作电压范围。
PN junction is the foundation of almost all the power devices. The avalanche breakdown voltage of PN junction determines the work voltage range of related power devices.
在PDP驱动电路中的高压功率器件大量采用了VDMOS器件，由二次击穿引起的器件损坏不容忽视。
VDMOS is widely adopted in PDP driver , the damage resulted by secondary breakdown effect can't be ignored .
本文对功率晶体管(GTR)正偏二次击穿测试仪的研制进行了说明，并给出了主要技术参数。
The development of the test instrument for forward-biased second breakdown for characteristics of power transistors (GIR) is described and main parameters are given.
利用气体击穿获取窄脉冲微波是提高微波效应源性能的一种较为有效的辅助手段，其费效比较低，能够较好地为当前的高功率微波效应实验服务。
The basic conclusion is that it is an effective cheap method to obtain narrow microwave pulse through gas breakdown, and works well in HPM effect experiment.
经过这样处理后的器件，漏极射频电流损失小，器件击穿电压和输出功率得以提高。
The device treated by the process is of small loss of drain radio-frequency current and increased electric breakdown strength of device as well as delivered power.
特别地，当一个高功率电磁脉冲突然加载在晶体管上时，会导致晶体管的电击穿或热击穿。
In particular, as a high-power EMP is suddenly injected into a transistor, electrical or thermal breakdown can be definitely caused.
如果这发生得过快或过于突然，则IGBT开关将由于导通瞬间的过度的电流和功率耗散而击穿。
If this happens too soon or too abruptly, the IGBT - switch will break down due to excess current and power dissipation at the moment of switch-on.
本文介绍一种高可靠的具有自动过流保护的智能高压大功率VDMOSFET，已研制出了漏源击穿电压大于200V；
A high reliability smart power VDMOSFET of high voltage with over current protection by oneself is descrital in the peper.
本文介绍一种高可靠的具有自动过流保护的智能高压大功率VDMOSFET，已研制出了漏源击穿电压大于200V；
A high reliability smart power VDMOSFET of high voltage with over current protection by oneself is descrital in the peper.
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