源-测量单元还可以测量其它的二极管参数，包括正向电压降和击穿电压。
The Source-Measure Unit can also test other diode parameters, including forward voltage drop and breakdown voltage.
根据固态噪声二极管在雪崩击穿状态的等效电路，设计出与之匹配的电路结构，以实现超噪比的最大输出。
For maximum exceed noise ratio generated, circuit structure to match the equivalent circuit diagram of the solid-state noise diode in avalanche breakdown state has been designed.
当二极管反向偏置时，仅有很小的、可忽略的漏电流流过，除非是达到反向击穿电压。
When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse breakdown voltage is reached.
平面型雪崩光电二极管(APD)在结弯曲处具有高的电场，导致在结边缘的提前击穿。
The edge pre-breakdown of planar-type avalanche photodiode (APD) is resulted from the intense electric field at the junction bend.
但就制备高反向击穿电压的微波pin二极管而言，这些工艺已不能满足要求。
But as concerning microwave PIN diode of high breakdown voltage, the craft can't already meet the demands.
特点是采用“反向击穿硅光电二极管”做靶面，并用快电子扫描。
The distinguishing feature of this plan is to adopt silicon backward photoelectric diode as target screen and to scan with fast electron.
稳压二极管。工作电压(名称)180 V。瞬态抑制二极管。反向击穿电压168V。
Voltage regulator diode. Working voltage (nom) 180 V. Transient suppressor diode. Reverse breakdown voltage 168 v.
二极管不能开路或击穿。
二极管不能开路或击穿。
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