发现在经典情况下，电导虚部和电化学电容都等于经典的几何电容。
We found that the emittance and the electrochemical capacitance are equal to the geometric capacitance in the classical limit.
这个复杂电路之所以变化是因为不同导线的几何参数的微小变化会改变其电容和电感。
This complex network changes due to small variations in cable geometry (construction) from cable to cable which affects capacitance and inductance somewhat.
根据界面双层电容值可用来判定自组膜的存在 ，也能得到膜的几何厚度 ；
The geometrical thickness, which was obtained from the capacitance of membrane, can be used to characterize the existence of membrane.
本文仔细地分析了铝栅和条状硅栅CM。S结构的节点电容与几何结构、物理、材料和工艺参数关系；
This paper analyses the relationship between node Capacitance of Al-gate and Si-gate CMOS structure and geometric layout, material characteristics, physical and technological parameters in details;
本文仔细地分析了铝栅和条状硅栅CM。S结构的节点电容与几何结构、物理、材料和工艺参数关系；
This paper analyses the relationship between node Capacitance of Al-gate and Si-gate CMOS structure and geometric layout, material characteristics, physical and technological parameters in details;
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