源区和漏区形成在鳍部内栅极的相对侧处。
A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.
依据导电沟道内的电势分布，分析了栅极长度变化对OSIT工作特性的影响。
Depending on the potential distribution in the conductive channel, the influence of changing gate length on the OSIT s operation characteristic is analyzed.
栅电介质层和栅极形成在鳍部的顶表面上、相对的侧壁上和鳍部内的凹陷的底部上和相对的侧壁上。
A gate dielectric layer and a gate electrode are formed on the top surface, the opposing sidewalls of the fin and on the bottom and on the opposing sidewalls of the recess in the fin.
栅电介质层和栅极形成在鳍部的顶表面上、相对的侧壁上和鳍部内的凹陷的底部上和相对的侧壁上。
A gate dielectric layer and a gate electrode are formed on the top surface, the opposing sidewalls of the fin and on the bottom and on the opposing sidewalls of the recess in the fin.
应用推荐