最后，讨论了结构变化对抛物形量子阱的共振隧穿的影响。
Finally, the effect of the structure on resonant tunneling through a parabolic quantum well is studied.
利用转移矩阵方法，研究了负介电常数材料和负磁导率材料组成的双层共轭结构的共振隧穿问题。
The resonance and tunneling problem of pairing conjugate structure consisting of negative permittivity and negative permeability materials were studied by using transfer matrix methods.
进一步指出，这些峰来自于电子共振隧穿量子结构中的量子束缚态。
Furthermore, these peaks are due to the resonant tunneling via bound states in the quantum structure.
在多量子阱结构中可看到明显的共振隧穿效应。
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance.
该结构降低了器件的寄生电容，改善了敏感薄膜的负阻特性，适用于共振隧穿效应陀螺。
The structure can reduce the parasitic capacitance of the sensor, improve the negative resistance characteristics of the sensitive film, and be used in micro gyroscope.
分析并设计了基于共振隧穿二极管的振荡电路、矢量水声传感器物理结构以及制作工艺，讨论了传感器信号处理方法。
The RTD oscillator, physical structures and fabrication process of vector hydrophone are designed, and the signal processing has been discussed.
制备了含两层绝缘层的双势垒结构隧道发光结，介绍了其结构特点，分析了电子在结中的共振隧穿特性。
The double-barrier light emission tunnel junctions have been fabricated. The characteristics of electronic resonant tunneling with the junctions have been analyzed.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising bandgap engineered heterostructure devices due to its negative differential resistance.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising bandgap engineered heterostructure devices due to its negative differential resistance.
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