同现有的牺牲层材料相比，光致抗蚀剂作牺牲层材料具有一些优越性。
Comparing with all the existing sacrificial layer materials, the photoresist being used as sacrificial layers has some advantages.
规程的当中一个被使用在做整体集成电路克服这个问题是石版影印根据光致抗蚀剂。
One of the procedures used in making monolithic integrated circuits which overcomes this problem is photolithography based on photoresists.
根据本发明可提供能够适用于排出喷嘴式的抗蚀剂涂布法的正型光致抗蚀剂组合物。
The positive photoresist composition which is suitable for used in a resist coating method by a discharge nozzle system can be provided according to the invention.
本发明涉及聚硅氧烷（硅倍半氧烷）和含有所述聚硅氧烷的光致抗蚀剂的新合成方法。
The present invention relates to polysiloxane and the synthesis of photoresist containing the said polysiloxane.
本发明的涂料组合物可用作光致抗蚀剂的覆盖涂层，包括可用在浸渍平版印刷工艺中。
Coating compositions of the invention are useful as photoresist overcoat layers, including in immersion lithography processing.
公开一种制造CMOS图像传感器的方法，其能提高层间绝缘膜与光致抗蚀剂之间的粘附力。
The invention discloses a method for fabricating CMOS image sensor, capable of increasing the adhesion between an interlayer insulating film and a photoresist pattern.
所述组合物可以施涂到硅片或其它基材上，形成开始时不溶于一般光致抗蚀剂显影溶液中的固化或硬化层。
The compositions can be applied to a silicon wafer or other substrate to form a cured or hardened layer which is initially insoluble in typical photoresist developing solutions.
概述了不使用光致掩模和光致抗蚀剂的无掩模布线形成技术，金属纳米粒子和纳米油墨的研究开发，喷墨法的应用和今后的课题。
This paper describes the maskless wiring formation technology not using photomask and photoresist, development of metal nano particle and nano ink, application of the inkjet method and future theme.
概述了不使用光致掩模和光致抗蚀剂的无掩模布线形成技术，金属纳米粒子和纳米油墨的研究开发，喷墨法的应用和今后的课题。
This paper describes the maskless wiring formation technology not using photomask and photoresist, development of metal nano particle and nano ink, application of the inkjet method and future theme.
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