该薄膜在近紫外及可见光范围内具有良好的光敏特性，其灵敏度和光电导增益较高，并且具有较好的线性光照特性。
The film has good photobehavior in the range from near ultraviolet to visible light, and it has high photosensitivity, high photoconductive gain and high linear illumination performance.
利用椭圆偏振光谱、反射谱、红外吸收谱和准稳态光电导（QSSPC）分析了氮化硅薄膜的特性。
The characterization of SiN thin films was studied by spectral ellipsometry, reflection spectra, infrared absorption spectroscopy (IR) and quasi-steady state photoconductance (QSSPC) measurements.
应用傅立叶红外仪测量了薄膜的红外谱，用共面蒸铝电极法测量了薄膜的光电导。
We got the infrared spectra by The Fourier Transform Infrared (FTIR) spectroscope and measured the thin films' photoconductivity using Coplanar Aluminum Plating Electrode methods.
应用傅立叶红外仪测量了薄膜的红外谱，用共面蒸铝电极法测量了薄膜的光电导。
We got the infrared spectra by The Fourier Transform Infrared (FTIR) spectroscope and measured the thin films' photoconductivity using Coplanar Aluminum Plating Electrode methods.
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