实验中发现，传统结构的光泵浦垂直外腔面发射半导体激光器，随着泵浦功率密度的增加，器件的温升现象严重。
In experiment, it was found that temperature increasing of original OPS-VECSEL is very serious with increasing pumping power a new type of semiconductor laser.
实验中发现，传统结构的光泵浦垂直外腔面发射半导体激光器，随着泵浦功率密度的增加，器件的温升现象严重。
In experiment, it was found that temperature increasing of original OPS-VECSEL is very serious with increasing pumping power a new type of semiconductor laser.
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