MOSFET的输入二极管是由一个电场控制在门区，因此总是输入阻抗非常高，因为没有正向偏置二极管，以降低输入阻抗。
The MOSFET input diode is controlled by an electric field in the gate region, thus the input impedance is always extremely high because there is no forward biased diode to lower the input impedance.
不同偏置电压的输入缓冲晶体管。
通过施加规定的反向偏流，然后测量二极管两端的电压，即可测得反向偏置电流。
Measure the reverse breakdown voltage by sourcing a specified re verse current bias, then measuring the voltage drop across the diode.
将其和晶体管发射极电流方程相结合得到不同偏置下晶体管的热点温度。
And together with the transistor current equations, the hot spots temperature of a transistor under different bias is obtained.
当二极管反向偏置时，仅有很小的、可忽略的漏电流流过，除非是达到反向击穿电压。
When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse breakdown voltage is reached.
对双极晶体管进行了不同剂量率、不同偏置的电离辐照实验。
Ionizing radiation response of bipolar transistors at different dose rates and biases has been investigated.
NPN晶体管开关应用中，接口电路和驱动电路的应用。内置偏置电阻(100和100科姆)。
NPN transistor for switching applications, interface circuit and driver circuit applications. With built-in bias resistors (100 and 100 kOm).
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c -V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
在干燥条件下，晶体管的偏置电流和没有被完全关闭。
Under dry conditions, the transistor will have no bias current and be fully off.
NPN晶体管开关应用中，接口电路和驱动电路的应用。借助内置的偏置电阻(2.2和2.2科姆)。
NPN transistor for switching applications, interface circuit and driver circuit applications. With built-in bias resistors (2.2 and 2.2 kOm).
二极管1n3595是完成此功能的很好的选择对象，因为其漏电流很低，即使在正向偏置电压为1mV时，漏电流典型值也小于1pa。
The 1n3595 diode is a good choice for this function because it has low leakage current, typically less than 1pa, even with a forward bias of 1mv.
作为一个管的电流增大的中点，或闲置，偏置电流，其他管目前正在减少的同等数额。
As one tube's current increases from the midpoint, or idle, bias current, the other tube's current is decreasing by an equal amount.
为了解决自导发射系统的交越失真及输出功率问题，采用无偏置型达林顿管替代；
The unbiased Darlington transistor was utilized to avoid crossover distortion and to improve power output for homing transmitting system.
但是，却很少有人知道，一些普通的NPN三极管，如2N2222、2N3904和 2N4401，在反向偏置时也表现出负阻特性。
What's not so well known is that some ordinary NPN transistors such as the 2N2222, 2N3904 and 2N4401 exhibit negative resistance when reversed biased.
在中子辐照环境下，变容二极管c—V特性发生变化，在给定偏置下，结电容随中子注量的增加而下降。
In the neutron radiation environment there occurs the change in C-V characteristics of the Tar-actor diodes. At the given bias the junction capacitance decreases with increase of neutron fluence.
所述第二二极管单元经配置以在所述设备的正常操作期间不呈现正向偏置。
The second diode unit is configured to present no forward bias during normal operation of the apparatus.
此外，利用反向偏置所述存储器单元的二极管的编程脉冲对所述存储器单元进行编程。
Further, the memory cell is programmed utilizing a programming pulse that reverse biases the diode thereof.
研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
介绍了隧道二极管的特性，研究了隧道二极管并联放大器的静态特性，主要性能指标和偏置要求。
For the tunnel diode parallel amplifier, quiescent operation point, circuit specification and offset voltage are studied.
介绍了隧道二极管的特性，研究了隧道二极管并联放大器的静态特性，主要性能指标和偏置要求。
For the tunnel diode parallel amplifier, quiescent operation point, circuit specification and offset voltage are studied.
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