采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。
The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage.
氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
本文提出了一种新型的硅基衬底体硅加工安培型微电极生物传感器。
A new silicon-based bulk micro-machined amperometric microelectrode biosensor is designed and fabricated with anisotropic silicon wet etching.
包括N型体晶硅体颗粒（01），铝衬底 （02），中间绝缘层（05），表面透明导电层（06）和减反射层（07）构成。
The solar cell includes N-type crystalline silicon particles (01), aluminum substrate (02), middle insulating layer (05), surface transparent conductive layer (06) and antireflection layer (07).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).
所述半导体衬底可以是SOI（绝缘体上硅）结构。
The semiconductor substrate may be an SOI (silicon on insulator) structure.
DSOI器件的衬底热阻和体硅器件非常接近，并且在进入到深亚微米领域以后能够继续保持这一优势。
The thermal resistance of DSOI devices is very close to that of bulk devices and DSOI devices can keep this advantage into deep sub-micron realm.
以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。
Without doping, plasma enhanced chemical vapor deposition (PECVD) of silica films on si substrates with gas mixtures of SiH_4 and N_2O is considered.
以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。
Without doping, plasma enhanced chemical vapor deposition (PECVD) of silica films on si substrates with gas mixtures of SiH_4 and N_2O is considered.
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