PNP外延硅晶体管。低频功率放大器。
PNP epitaxial silicon transistor. Low frequency power amplifier.
第六章研究了高阶统计量在晶体管低频噪声检测中的应用。
In chapter six, the application of higher order statistics in detection low-frequency noise of transistor is discussed.
目前有关晶体管低频噪声测量仪器普遍存在的问题是测量误差大、时间长、所给噪声参数不完善。
Nowdays the problems commonly existing in the measurement of low frequency noise of transistors are, great errors, long time and imperfection of noise parameters.
本文中描述用振幅峰值的方法，测量面接触型晶体管OC70，OC71和点接触型晶体管2N32A内窄频带低频率噪声的振幅分布。
The amplitude distribution of narrow hand semiconductor noise in junction type OC70, OC71 and point contact type 2N32A transistors were measured experimentally by the "maximum amplitude" method.
本文中描述用振幅峰值的方法，测量面接触型晶体管OC70，OC71和点接触型晶体管2N32A内窄频带低频率噪声的振幅分布。
The amplitude distribution of narrow hand semiconductor noise in junction type OC70, OC71 and point contact type 2N32A transistors were measured experimentally by the "maximum amplitude" method.
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