现代半导体集成电路的制造往往要求涉及大电流低能量带电搀杂剂原子的注入步骤。
The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms.
现代半导体集成电路的制造往往要求涉及大电流低能量带电搀杂剂原子的注入步骤。
The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms.
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