研究了低温多晶硅发射极晶体管的频率特性及其温度关系。
The temperature dependence of frequency characteristics of PET is researched on.
低温多晶硅薄膜晶体管(LTPSTFT)广泛应用于平板显示。
Low temperature polycrystalline silicon thin film transistors (LTPS TFTs) are widely used in the flat panel displays.
Kim称：“我们现在已经可以在6G尺寸级别的基板上应用低温多晶硅技术。
Kim said, "We will be able to use a low-temperature polycrystal silicon with the sixth-generation size glass substrate."
本文对低温多晶硅薄膜晶体管（TFT）AM-OLED的驱动技术进行了研究。
This paper aims at the research on drive technology of LTPS (Low Temperature Poly-Silicon) TFT (Thin Film Transistor) AM-OLEDs.
该生产线用于生产非晶硅tft显示器是被转移到生产的低温多晶硅tft显示器。
The manufacturing line used for the production of amorphous silicon TFT displays is was shifted over to the production of low temperature poly-silicon TFT displays.
运用本发明，可有效地降低公知低温多晶硅薄膜晶体管的热电子效应，使得低温多晶硅薄膜晶体管在工作时的稳定性能够有明显的改善。
The present invention can reduce the hot electron effect in low-temperature polysilicon film transistor effectively and raise the stability of low-temperature polysilicon film transistor obviously.
采用热丝化学气相沉积法(HFCVD)在普通玻璃衬底上低温沉积多晶硅薄膜。
Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition (HFCVD) on glass at low-temperatures.
因此可以认为，在多晶硅薄膜生长的最初阶段，空间反应过程对低温晶化起重要作用。
It is considered that in the initial stage of film growth, the space reaction processes play an important role for the low-temperature crystallization of pc-Si film.
因此可以认为，在多晶硅薄膜生长的最初阶段，空间反应过程对低温晶化起重要作用。
It is considered that in the initial stage of film growth, the space reaction processes play an important role for the low-temperature crystallization of pc-Si film.
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