本文介绍了大生产中超高频低噪声管的失效现象，对生产结果进行了讨论，亦提出了新的工艺方法。
The failure Phenomena of ultrahigh frequency and low noise transistor in mass production are described. The production results are discussed. Finally, the new technique are presented.
管逆变工作频率高，高效，低噪声。
V-MOS inverter high running frequency, high efficiency, low noise.
在分析常用低噪声快速光电探测器的基础上，选择pin光电二极管来探测氦氖激光纵模脉冲。
Based on analyzing common low noise and fast photodetectors, PIN photodiode is selected to detect He-Ne laser longitudinal mode pulse.
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
经过反复实验，在现有设备条件下，为3dg460微波低噪声晶体管的研制提供了合格光刻版。
Experimenting repeatedly, by our limited equipments we provided the qualified photomask for the study of 3dg460 microwave low-noise transistor.
m工艺设计了一种低噪声的四管像素结构。
A low noise four transistor pixel structure was designed based on SMIC 0.
本文对微波晶体管宽带低噪声放大器的设计和实现进行了研究。
This paper deals with the process of microwave broadband and low noise amplifier design and research.
由此，提供包括相同导电型的晶体管的、能够降低噪声的影响的半导体装置和具备该半导体装置的显示装置。
Accordingly, a semiconductor device which is composed of conductivity type transistors that are identical and which is not affected by a noise and a display device including it are provided.
在共源级已优化的基础上，为了实现低噪声放大器的性能最优，提出了对共栅管的沟道宽度进行优化设计的方法。
On the base of the optimization of source, a method to optimize the whole performance is given by adjusting the channel width of gate.
在共源级已优化的基础上，为了实现低噪声放大器的性能最优，提出了对共栅管的沟道宽度进行优化设计的方法。
On the base of the optimization of source, a method to optimize the whole performance is given by adjusting the channel width of gate.
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