后者是专用于分析和设计低压低功耗模拟电路的全解析型MOSFET模型。
The latter is a fully analytical MOSFET model dedicated to the analysis and design of low-voltage low-power analog circuits and completely built on fundamental physical properties.
通过对低压低功耗集成电路设计技术的分析，着重设计了一个基于衬底驱动技术的CMOS带隙基准电压源，其带有提高电源抑制比电路和启动电路。
CMOS bandgap voltage reference with low voltage based on the bulk driven technology is designed in this paper, with circuit to improve PSRR and start-up circuit.
通过对低压低功耗集成电路设计技术的分析，着重设计了一个基于衬底驱动技术的CMOS带隙基准电压源，其带有提高电源抑制比电路和启动电路。
A CMOS bandgap voltage reference with low voltage based on the bulk driven technology is designed in this paper, with circuit to improve PSRR and start-up circuit.
通过对低压低功耗集成电路设计技术的分析，着重设计了一个基于衬底驱动技术的CMOS带隙基准电压源，其带有提高电源抑制比电路和启动电路。
A CMOS bandgap voltage reference with low voltage based on the bulk driven technology is designed in this paper, with circuit to improve PSRR and start-up circuit.
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