地电流干扰主要是由于半导体器件开关动作产生的快速上升和下降的开关电压作用在对地电容上产生的位移电流形成的。
The grounding current EMI is caused by charging and discharging of the parasitic capacitances between the circuit and ground during the switching instant devices.
地电流干扰主要是由于半导体器件开关动作产生的快速上升和下降的开关电压作用在对地电容上产生的位移电流形成的。
The grounding current EMI is caused by charging and discharging of the parasitic capacitances between the circuit and ground during the switching instant devices.
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