借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。
The high speed insulated gate bipolar transistor (IGBT) transport model is derived by ambipolar transport theory in this paper.
借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。
The high speed insulated gate bipolar transistor (IGBT) transport model is derived by ambipolar transport theory in this paper.
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