一种当施用至所述薄膜时，能增加有机硅酸盐玻璃介电薄膜疏水性的处理剂组合物。
A treating agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film.
采用不同的沉积氧气压，分析了其对薄膜微观结构和介电性能的影响。
Study indicated that oxygen deposition pressure exerts a strong impact on the microstructure and the dielectric properties of the films.
研究了衬底温度对薄膜结构、表面形貌以及介电性能的影响。
Investigated were the effects of substrate temperature on the structures and surface morphology, dielectric properties of films.
同均一相pzt薄膜材料相比，由致密层和多孔层交替排列形成的近周期PZT多层膜具有铁电、介电增强效应。
Compared with the uniform PZT thin films, the PZT multilayer with alternating dense-PZT and porous-PZT layers exhibits an enhancement both in ferroelectric and dielectric performances.
研究了有晶种层的PLZT薄膜的结晶温度及介电性能。
The crystallization temperature and dielectric properties of PLZT thin films with PLT seeding layers were investigated.
PS T铁电薄膜是一种具有优良铁电、热释电和介电等性能的铁电材料。
PST thin films are ferroelectric materials with many advantages such as excellent ferroelectric, pyroelectric and dielectric properties.
利用介孔氧化硅薄膜作为模板，通过无电沉积路线在介孔薄膜孔道内合成了高密度钯金属纳米线阵列。
An electroless deposition route was employed to incorporate high density palladium nanowire arrays into the pore channels of mesoporous thin films (MTFs) which served as templates.
研究了STO薄膜金属绝缘体半导体(MIS)结构的介电和界面特性。
The dielectric and interface characteristics of STO with a metal insulator semiconductor (MIS) structure were investigated.
介电膜，是一种重要的电子薄膜。在微电子技术和光电子技术中有着广泛的应用。
Dielectric thin film was an important kind of electronic thin films, which has wide applications in microelectronic and photo-electronic technology.
界面层的存在使介电系数、自发极化、矫顽电压、漏电流都与薄膜的厚度有关。
Dielectric constant polarization coercive voltage and leakage current have relations with the thickness of thin films because of the interface layer.
通过自制的铝电解电容器模型，利用氧化铝薄膜具有的介电性能，通过电容量法可以准确快捷地计算氧化膜的厚度，并通过显微直接观察法、电解电量法、伏安法进行了验证。
It was swiftly to obtain the thickness of alumina film by using of it's dielectric property and capacitor model, which was validated by means of EM, electric quantity and volt-ampere.
对铁电薄膜施加一个适当的外力，可以大幅度的提高薄膜的介、压电系数。
The dielectric and piezoelectric responses could be improved by applying an appropriate external stress to the film.
基于该系统开发出了简单、可靠、可调性好并具有较高精度的PZT铁电薄膜介电性能测试系统。
PZT film is one of the most useful functional materials and has been very widely used in MEMS.
相对于非周期重复排列薄膜，周期单元周期性重复排列方式提高了异质薄膜的介电性能，而介电损耗较低。
The periodic-unit periodic repeated arrangement relative to the non-periodic repeated arrangement increases the dielectric property of the heterogeneous thin film, and lowers dielectric loss.
随着极化电场的升高，PVDF压电薄膜的压电应变系数升高，介电常数升高，介电损耗降低。
The piezoelectric strain coefficient and the dielectric constant of PVDF films increased, and the dielectric loss decreased with the increasing of the polarization field.
元件制程：蚀刻，表面钝化，介电材料薄膜。
Device Processing: Etching. Surface passivation; dielectric films.
对于在用作集成电路的层间介电体时的改善性能，确定了低介材 料和包含该材料的薄膜及其制备方法。
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same.
不同预烧温度所制备的CCTO薄膜，经快速热退火处理后，其介电损耗值较小，基本在0.1~0.35之间。
The CCTO films prepared with different preheating temperature after rapid thermal annealing treatment have the smaller dielectric loss, and the values lie in between 0.1~0.35.
并探讨了极化电场对薄膜压电介电性能的影响。
The effect of the polarization field on the piezoelectric and dielectric properties of PVDF films was also studied.
本文简要介绍了电子陶瓷系统中绝缘体、介电质、压电体及铁电薄膜材料及其制备工艺和应用方面的一些新进展。
In this paper, Some of the recent developments in materials, processes and applications for dielectrics, piezoelectrics, and ferroelectric thin...
本文简要介绍了电子陶瓷系统中绝缘体、介电质、压电体及铁电薄膜材料及其制备工艺和应用方面的一些新进展。
In this paper, Some of the recent developments in materials, processes and applications for dielectrics, piezoelectrics, and ferroelectric thin...
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