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本发明提供了一种互补金属氧化物半导体(CMOS)装置及其制造方法。
Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.
youdao
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本发明提供了一种互补金属氧化物半导体(CMOS)装置及其制造方法。
Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.
youdao