测试结果表明，沉积六硼化镧薄膜后的二极管发射性能与纯硅尖相比具有明显增强。
The results show that thin film with deposition of LaB6 in the diode can markedly improve the emission properties compared with pure silicon tip.
测试结果表明，沉积六硼化镧薄膜后的二极管发射性能与纯硅尖相比具有明显增强。
The results show that thin film with deposition of LaB6 in the diode can markedly improve the emission properties compared with pure silicon tip.
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