在编程此反熔丝一次可编程非易失存储器单元后，已编程的区域(例如为连结)可作为二极管，其形成于反熔丝上。
A programmed region, i. e., a link, functioning as a diode, is formed on the anti-fuse after the anti-fuse OTP nonvolatile memory cell is programmed.
所述集成电路包括具有二极管及与所述二极管连通的反熔丝的存储器单元。
Such integrated circuit includes a memory cell with a diode and an antifuse in communication with the diode.
由于二极管在单元尺寸上的优势，被认为是高密度相变存储器中驱动管的不二之选。
Diode is considered to be the best driver of high-density phase change Random Access Memory (PCRAM) for its advantage of the cell area.
此外，利用反向偏置所述存储器单元的二极管的编程脉冲对所述存储器单元进行编程。
Further, the memory cell is programmed utilizing a programming pulse that reverse biases the diode thereof.
用发光二极管显示器或者液晶显示器控制其最小和最大扭矩值。内部存储器中可储存多达2000个测量数值，具有个人计算机或者串接打印机的借口。
Electronic torque Tester. Controlling of min - and maximum torque values with LED and LCD-display. Internal memory for 2000 values, interface for PC or serial printer.
用发光二极管显示器或者液晶显示器控制其最小和最大扭矩值。内部存储器中可储存多达2000个测量数值，具有个人计算机或者串接打印机的借口。
Electronic torque Tester. Controlling of min - and maximum torque values with LED and LCD-display. Internal memory for 2000 values, interface for PC or serial printer.
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