指出了提高微波固体噪声二极管噪声输出功率的途径。
The technological approach for increasing noise output power is obtained for microwave solid state noise diodes.
本文以带有隧道穿透的PN结雪崩倍增理论，研究了微波固体噪声二极管。
The microwave solid state noise diodes are investigated based on the PN junction avalanche multiplication theory with tunneling penetration.
根据电压源的极性，互相并联的两个二极管(D)中的一个用来减小噪声，而另一个二极管则提供放电通路。
Depending on the polarity of the voltage source, one of the two diodes (d) in parallel is used to reduce noise while the other provides a discharge path.
根据固态噪声二极管在雪崩击穿状态的等效电路，设计出与之匹配的电路结构，以实现超噪比的最大输出。
For maximum exceed noise ratio generated, circuit structure to match the equivalent circuit diagram of the solid-state noise diode in avalanche breakdown state has been designed.
考虑了工作信号躁声，感光光电二极管深嵌入硅片中，与芯片表面上产生噪声的元件相隔离。
Operating signal noise was also considered, and the sensor photodiodes were deeply embedded in silicon to isolate them from noise-causing elements on the chip surface.
前置放大器与均衡器或滤波器跟在雪崩二极管检测器的后面以获得增益，线性信号处理及噪声宽带的抑制。
The avalanche photodiode detector is followed by a front-end amplifier and equalizer or filter to provide gain as well as linear signal processing and noise bandwidth redution.
根据电压源的极性，互相并联的两个二极管中的一个用来减小噪声，而另一个二极管则提供放电通路。
Depending on the polarity of the voltage source, one of the two diodes in parallel is used to reduce noise while the other provides a discharge path.
在分析常用低噪声快速光电探测器的基础上，选择pin光电二极管来探测氦氖激光纵模脉冲。
Based on analyzing common low noise and fast photodetectors, PIN photodiode is selected to detect He-Ne laser longitudinal mode pulse.
使用肖特基二极管d1和D2，而不是普通二极管，为的是减少总线上低状态电压，改进噪声极限。
Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus, improving the noise margin.
讨论了微波固体噪声二极管使用频率的上限和影响噪声输出功率的因素。
The upper frequency limit and some factors affecting noise output power of microwave solid state noise diodes are discussed.
文中分析了光电二极管型CMOS有源图像传感器的噪声源，并对其抑制技术进行了讨论。
This paper analyzes the photodiode type CMOS active passive sensors noise and discusses its noise suppress technology.
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
比较了纯PN结雪崩二极管和带有隧道穿透的PN结雪崩二极管的噪声功率谱密度。
The spectral noise power density of pure avalanche diodes is compared with that of avalanche the diodes with tunneling penetration.
比较了纯PN结雪崩二极管和带有隧道穿透的PN结雪崩二极管的噪声功率谱密度。
The spectral noise power density of pure avalanche diodes is compared with that of avalanche the diodes with tunneling penetration.
应用推荐