掺杂质，掺质剂加入纯半导体材料中的少量硼等物质，用于晶体管和二极管中以改变半导体的。
A substance, such as boron, added in small amounts to a pure semiconductor material to alter its conductive properties for use in transistors and diodes.
很多工程师把纳管看作硅的替代品，当今，晶体管、二极管和其他半导体器件通常都是制作在硅这种介质上。
Many engineers see nanotubes as an alternative to silicon, the medium in which transistors, diodes and other semiconductor device structures are usually built today.
通过给晶体管增加一些电容、二极管和电阻，使用保持时间可调的复位IC，将纯手动复位转换为自动复位。
By adding a transistor with some capacitors, diodes, and resistors, you can transform a pure-manual reset to an automatic reset with adjustable hold time for the reset IC.
具备基本的晶体管、电阻器、电容器和二极管知识。
Understing basic characteristics of transistor, resistor, capacitor diode.
该化合物可以用于电子器件，如有机薄膜晶体管(OTFT)，显示器件，发光二极管，光伏电池，光检测器和存储单元。
The compounds can be used in electronic devices such as organic thin film transistors (OTFTs), display devices, light-emitting diodes, photovoltaic cells, photo-detectors, and memory cells.
这些数据和结果有助于设计和研制自旋场效应晶体管、自旋发光二极管和自旋共振隧道器件等。
These data and results are helpful to design and develop spin field effect transistor, spin light-emitting diode, spin resonant tunneling device, etc.
通常由一个电阻器或者电流源，电容器和一个“阀门”装置，如氖灯、两端交流开关、单结晶体管或者耿式效应二极管来实现。
It is usually implemented with a resistor or current source, a capacitor, and a "threshold" device such as a neon lamp, diac unijunction transistor, or Gunn diode.
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
第一代的调谐器芯片、射频晶体管和二极管需要高达12至15伏的供电电压。
The first tuner semiconductors, RF transistors and diodes, used supply voltages of as high as 12 to 15V.
第一代的调谐器芯片、射频晶体管和二极管需要高达12至15伏的供电电压。
The first tuner semiconductors, RF transistors and diodes, used supply voltages of as high as 12 to 15V.
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