• 一种半导体材料导电系数介于导体绝缘体之间

    Germanium is a semiconductor material with its conductivity lying between that of conductors and that of insulators.

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  • 撤去电压时,这些分离电荷在重新组合时会绝缘体相连电路中产生衰减的电流

    When the voltage is removed, the separated charges generate a decaying current through circuits connected to the insulator as they recombine.

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  • 开始任何工作之前,必须检查断开部件是否带电接地绝缘体相邻、组件外。

    Before starting any work, check the de-energized parts for presence of power and ground or short-circuit them in addition to insulating adjacent live parts and elements.

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  • 其关键技术第一个恰好相反,它绝缘体迅速转为导体,其中所用的绝缘体金刚砂

    This requires a trick opposite to the first one-suddenly making an insulator into a conductor. The insulator in question is silicon carbide.

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  • 特定来说易失性存储器装置经历许多编程循环时电荷变为俘获浮动栅极沟道之间绝缘体电介质中。

    In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.

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  • 结构普通金属绝缘体半导体效应晶体管(MISFET)基本相同

    Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).

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  • 酸酐固化剂组合浇铸树脂用于绝缘体开关等,有机械强度F级的绝缘性能

    Casting resin used with anhydride hardeners for making insulators and switchgear components of high mechanical strength, for class 'f' Insulation.

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  • 电器可以多种设置方式,其中优选使馈电器通过绝缘体穿过金属外壳且馈电器两端分别金属外壳管状导体相连接

    The feeders may be set in different modes, and are preferably connected to both the metal casing and one tubular conductor through insulator in the metal casing.

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  • 绝缘体采用优质高铝瓷,具有良好的耐热冲击机械电气性能绝缘可靠

    Ceramic insulator provides stronger resistance against thermal shock, greater mechanic and electric strength and reliable insulation.

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  • 给定绝缘体设备原理上需要维持绝缘体厚度横向尺寸比例(参考文献1)。

    For a given gate dielectric, device physics require maintaining the dielectric thickness in proportion to lateral dimensions (Reference 1).

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  • 给定绝缘体设备原理上需要维持绝缘体厚度横向尺寸比例(参考文献1)。

    For a given gate dielectric, device physics require maintaining the dielectric thickness in proportion to lateral dimensions (Reference 1).

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