掺杂是制备硅纳米线半导体器件的一个有效手段。
Doping of silicon nanowire is one of effective means to manufacture silicon nanowire semi -conductor devices.
公开了一种在单晶硅生长过程中使用的掺杂硅熔体的制备方法。
A process for preparing doped molten silicon for use in a single silicon crystal growing process is disclosed.
所注入的掺杂剂在硅层中具有第一掺杂剂分布。
The implanted dopant has a first dopant profile in the silicon layer.
该方法包括用第一类型掺杂剂掺杂硅层并且执 行第一注入工艺以便在硅层中注入与第一类型相反的第二类型的掺 杂剂。
The method includes doping a silicon layer with a first type of dopant and performing a first implant process to implant dopant of a second type opposite the first type in the silicon layer.
本发明提供一种铋掺杂硅锌硼基光学玻璃及其制备方法。
The invention provides a bismuth doped silicate zinc boron based optical glass and a preparation method thereof.
本发明提供一种铋掺杂硅锌硼基光学玻璃及其制备方法。
The invention provides a bismuth doped silicate zinc boron based optical glass and a preparation method thereof.
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