Intel will build the parts on its 14 nm tri-gate transistor technology.
To simplify (a lot) the tri-gate transistor allows power to flow over three surfaces of a tall and narrow silicon fin, rather than over a flat surface.
Intel is in the game, and the 3D Tri-Gate transistor capability at the 22nm node puts Intel approximately three years ahead of anybody in the world of semiconductor manufacturing, in our opinion, which is unprecedented.
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Every hybrid motor needs an inverter, and the key component inside inverters is the integrated gate bipolar transistor, or IGBT.
The greater the gate length, the slower the transistor, since electrons passing through the channel in the transistor (which is the same length as the gate) have further to travel.
In particular, the length of the gate may vary from one transistor to the next.
Only when all the masking and etching is complete is the sacrificial gate layer dissolved away, allowing the gates (and the insulation layers between the gate and channel of each transistor) to be filled in.
The shorter gate length, and the fact that the gate length does not vary from transistor to transistor, should help chips that are built using vertical transistors to run faster.
Having a better-functioning gate also lets more current flow when the transistor is on.
Prototypes of the vertical transistor, on the other hand, already have a gate length of 50 nanometres, and it should be possible to make them smaller still.
This is bad, because gate length is one of the characteristics that determine a transistor's speed.
The vertical transistor, however, does not rely on lithography and etching to define its gate length.
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