It boasts the industry's highest density as well as the highest performance level of 400 megabits-per-second (mbps) data transfer rate based on the toggle DDR 2.0 interface.

ENGADGET: Samsung puts 128-gigabit 3-bit cell flash into production, plans to build more memory cards

Samsung and Toshiba will focus on assuring a 400Mbps interface for the toggle DDR 2.0 specification, which provides a three-fold increase over toggle DDR 1.0, and a ten-fold increase over 40Mbps SDR NAND in widespread use today.

ENGADGET: Samsung and Toshiba double-down on 400Mbps DDR 2.0 NAND flash memory standard

"Toggle DDR provides a faster interface than conventional NAND using an asynchronous design, delivering the benefits of high-speed data transfer to a wider market, such as for solid state drive (SSD) applications including enterprise storage, mobile phones, multimedia terminals and consumer products, " said Masaki Momodomi, Technical Executive, Memory product, Toshiba Corporation.

ENGADGET: Samsung and Toshiba double-down on 400Mbps DDR 2.0 NAND flash memory standard

The current toggle DDR 1.0 specification applies a DDR interface to conventional single data rate (SDR) NAND architecture.

ENGADGET: Samsung and Toshiba double-down on 400Mbps DDR 2.0 NAND flash memory standard