TOKYO-Toshiba Corporation (TOKYO: 6502) today announced that the company has developed a prototype memory element for a spin transfer torque magnetoresistive random access memory (STT-MRAM) that achieves the world's lowest1 power consumption yet reported, indicating that it has the potential to surpass the power consumption efficiency of SRAM as cache memory.

ENGADGET: Toshiba goes perpendicular to solve MRAM's power issues, rethink cache memory

Grandis makes a non-NAND flash solid state storage technology called spin-transfer torque RAM (STT-RAM) that stores information via the direction of magnetization in a spin-polarized electron current.

FORBES: The Enormous Flash: New Opportunities and Announcements for Solid State Storage

If you're a frequent reader you're surely well aware of the potential of spin torque transfer memory, or STT-MRAM, and how spin-polarized magnetic currents (and the electrons they love to caress) might hold the potential to revolutionize storage as we know it.

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