While the FinFET process offers significant power and performance benefits compared to the traditional planarprocess, the move from two-dimensional transistors to three-dimensional transistors introduces several new IP and EDA tool challenges such as modeling.
The 20nm 64Gb NAND uses a planar cell structure -- the first in the industry -- to overcome the inherent difficulties that accompany advanced process technology, enabling performance and reliability on par with the previous 25nm generation.