Toshiba will present three papers on the new STT-MRAM and its technologies on December 11 and 12 at IEDM, the International Electron Device Meeting held by IEEE in San Francisco from December 10.

ENGADGET: Toshiba goes perpendicular to solve MRAM's power issues, rethink cache memory

The Stanford team's work was featured recently as an invited paper at the prestigious International Electron Devices Meeting (IEDM) as well as a "keynote paper" in the highly regarded IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

ENGADGET: Stanford engineers find work around for barriers to carbon nanotube computers