When it is applied to amorphous insulating materials with double well potential model being constructed based on real structure, simulation results are in accord with experiments.
将这种方法应用到具体的非晶相绝缘体中，以材料的实际结构来构造双势垒模型，得到的结果与实验相吻合。
The structure model in amorphous semiconductor was analysed and probed into in this paper, and confirm the structure of middle and short range order in amorphous semiconductor by means of experiment.
以一定的结构模型分析探讨并从实验上证实了非晶半导体中短程序、中程序的存在。
The structure model in amorphous semiconductor was analysed and probed into in this paper, and confirm the structure of middle and short range order in amorphous semiconductor by means of experiment.
以一定的结构模型分析探讨并从实验上证实了非晶半导体中短程序、中程序的存在。
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