量子隧穿效应是指粒子能够穿过正常来说它的能量不足以通过的障碍。
Quantum tunneling is an effect where a particle can pass through a barrier it would not normally have the energy to overcome.
通过电子尝试隧穿这一过程，我们不仅可以观察到原子与纳米管之间的相互作用，还可以一窥发生在纳米量级上的动力学效应。
We can observe the interaction of the atom and the nanotube as the electron is trying to tunnel, and this offers us a chance to peek at some of the interesting dynamics that happen at the nanoscale.
隧穿磁强计是一种利用量子力学中隧道效应原理研制的MEMS磁强计。
Tunneling magnetometer is a kind of MEMS magnetometer based on tunnel effect in quantum mechanics.
研究了电路量子态的演化，电路中电荷及电流的量子压缩效应以及介观电容器中隧穿电流的量子崩塌与复苏现象。
Subsequently, we study the evolution of the quantum state, the quantum squeezing effects of the charge and the current, and the quantum CR phenomenon of the tunneling current in the capacitance.
高场下的电子过程主要有隧穿效应及过热电子的有关行为。
Tunnel Effect and the different behaviors of hot electrons consist of the main electronic processes under high electric field.
用数值分析的方法讨论了中性陷阱对超薄场效应晶体管（MOSFET）隧穿电流的影响。
The effect of neutral trap on tunneling current in ultrathin MOSFETs is investigated by numerical analysis.
介绍了共振隧穿二极管（RTD）中电荷积累效应，利用顺序隧穿模型分析了RTD中有电荷积累时器件各部分电压的再分布；
The electric charge accumulation effect in RTD was introduced. The electrical voltage redistribution along the device as charge accumulated was analysed by sequential tunneling model.
提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型。
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.
这是由于晶界处以及颗粒内部增加的自旋相关的散射和隧穿效应所致。
It is due to the enhancement of spin dependent and independent scattering and tunneling effects on the interfaces of grain boundaries and inside the grains.
造成这种不对应的原因是量子上所特有的隧穿效应。
该结构降低了器件的寄生电容，改善了敏感薄膜的负阻特性，适用于共振隧穿效应陀螺。
The structure can reduce the parasitic capacitance of the sensor, improve the negative resistance characteristics of the sensitive film, and be used in micro gyroscope.
在多量子阱结构中可看到明显的共振隧穿效应。
运用自洽的蒙特卡罗方法模拟了肖特基接触的隧穿效应。
Considering the tunneling effect and the Schottky effect, the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.
自从对于锥形分子，其分子内的重新组合的量子隧穿效应1927年被证实以来，人们在研究隧穿效应上做了大量的工作。
Since the quantum tunneling for intramolecular rearrangements in pyramidal molecules was testified in 1927 a lot of work has been done to study the tunneling.
它已经展现出，隧穿效应过程由于与腔场的耦合作用而变化为准周期。
It has been shown that when taking into account the interaction between the internal and external degrees of freedom the tunneling process becomes quasiperiodic.
电子在元件中利用量子穿隧效应流动，少量的电子可穿过绝缘层的障碍到达另一边。
Current flows through the device by the process of quantum tunneling: a small number of electrons manage to jump through the barrier even though they are forbidden to be in the insulator.
电子在元件中利用量子穿隧效应流动，少量的电子可穿过绝缘层的障碍到达另一边。
Current flows through the device by the process of quantum tunneling: a small number of electrons manage to jump through the barrier even though they are forbidden to be in the insulator.
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