介绍了一种新型带有主、辅电路的真空负荷开关，它具有低截流、高转移电流。
This paper introduces a new vacuum load - breaking switch with main and auxiliary circuit, which is of lower current chopping level, higher transferring current.
调制管转移射频放大器中的电流。
应用转移矩阵法，求出了垂直于界面的量子能级，并计算了场发射电流。
By using the transfer matrix method, we calculated the quantum energy levels and emission current.
文中还对怎样估计实际雷电流下的电缆转移阻抗提出了建议。
A proposal to estimate the transfer impedance in case of lightning current has been offered.
根据长电弧电压电流波形，建立了电压方波电弧的理想电压电流转移特性曲线和对应的电弧等效模型。
According to the voltage and current waveforms of arc, an ideal voltage current transform characteristic curve and an equivalent circuit representing for long arc have been described in this paper.
测量了不同电流下模式的转移与竞争。
Mode shift and competition have been measured at different current levels.
本文制定了开关投切的工作流程，通过电气参数计算并对开关投切过程进行仿真分析，本文所设计的开关能够实现特大电流的电流转移。
The switching on-off flows are introduced in this paper. By calculating electrical parameters and simulating the switching motion process, the switch can achieve the current transfer of huge current.
限流过程包括两次电流转移：快速开关至门极关断晶闸管，再至限流电阻。
The operation of the SCCL involves two current transferring processes, i. e. the fast switch transfers the short circuit current to the GTO and then the GTO to the limiting resistor.
测量了在多孔硅形成初期阶段的电流i -电压V曲线，计算了硅表面原子吸附不同元素时电荷的转移量。
The I-V curves of the initial stage of porous silicon formation have been measured, and the amount of charge transfer for silicon atoms adsorbed different elements has been calculated.
研究了基于一次电流转移的限流器方案，它由快速开关和PTC电阻并联组成。
The FCL is composed of a fast switch and a PTC resistor connected in parallel.
本文主要研究银基触头材料对称配对和非对称配对时直流小电流下触头在分断和接通过程中的材料转移机理。
This paper focuses on the mechanism of the material transfer with symmetrically-pairing and asymmetrically-pairing contacts made of silver-base materials at make and at break of electric contacts.
采用快速开关可显著减少故障电流限制器的运行损耗，采用GTO可降低电流转移的难度。
By using the fast switch, the power loss of the FCL in normal operation condition could be avoided, and by using the GTO, the rapid current-transferring could be realized with a smaller difficulty.
在电路板的两面敷铜形成保护环，可以在电路高阻抗节点周围转移漏电流(图3)。
Adding copper traces on both sides of the board to form guard rings around the circuit's high-impedance nodes diverts leakage currents (Figure 3).
在电路板的两面敷铜形成保护环，可以在电路高阻抗节点周围转移漏电流(图3)。
Adding copper traces on both sides of the board to form guard rings around the circuit's high-impedance nodes diverts leakage currents (Figure 3).
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