本发明涉及具有单端读出放大器的半导体器件。
The invention relates to a semiconductor device having a single-ended sensing amplifier.
本文还对读出放大器的设计提出了若干改进建议。
Some Suggestions of improving the sense amplifier design are made.
本发明提供一种用于读取存储器单元的状态的读出放大器电路。
A sense amplifier circuit for reading the state of memory cells.
借助于计算机的模拟计算，对于读出放大器的设计作了一些改进。
Using simulation techniques, we have made some improvement for design of the sense amplifier.
将磁心存储器读出放大器的输出选通到寄存器的触发器中的一种脉冲。
A pulse to gate the output of a core memory sense amplifier into a trigger in a register.
所述读出放大器基于所述启用信号检测用于所述列存储器单元的位线。
The sense amplifiers detect bit lines for the columns of memory cells based on the enable signals.
一种减少读出放大器功耗，防止错误操作并可高速工作的半导体存储器。
A semiconductor memory circuit reduces a current consumed by sense amplifiers, prevents erroneous operation, and can operate at high speed.
因此可通过连接到位线的电压比较器读出放大器来检测存储器元件的状态。
The state of the memory element can thereby be detected by a voltage comparator sense amplifier that is connected to the bit line.
所述存储器装置包括M个正规字线驱动器、虚设字线驱动器、存储器阵列、N个读出放大器和时序控制电路。
The memory device includes M normal word line drivers, a dummy word line driver, a memory array, N sense amplifiers, and a timing control circuit.
所述存储器装置包括M个正规字线驱动器、虚设字线驱动器、存储器阵列、N个读出放大器和时序控制电路。
The memory device includes M normal word line drivers, a dummy word line driver, a memory array, N sense amplifiers, and a timing control circuit.
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