本文报道了应用变温光伏方法对半导体表面能级，表面态密度的非破坏性测量原理。
The measured undestructivly theory for the surface energy level and the surface state density of semiconductors fay the method of photovoltages at changed temperatures is reported.
用该态模型解释了氮化物产生高密度表面态的原因和深表面能级与较浅的瞬态电流激活能间的矛盾。
This new two dimensional surface states model explains the origin of surface states and the contradiction between deep surface levels and the low activation energy of a transient current.
当光子照射到材料表面时，电子受到光子的激发由一个能级跳到更高的能级上，而这些能级对材料来说是特定的。
When a photon strikes the surface, it excites an electron to a higher energy level, which is specific to the material.
从准异质结的概念出发，讨论了表面费米能级钉扎现象。
Finally, according to the concept of quasi-heterojunction the Fermi energy level pinning on the surface is discussed.
本文研究了半导体表面空间电荷区中的深能级中心的电场增强载流子产生效应；
The field-enhanced carrier generation of deep level centers in semiconductor space charge region has been studied.
表面陷阱能级和密度的变化也会影响表面陷阱效应。
Also, energy level and density of the surface-trap will influence the surface-trap effect.
提出采用矿物浮选常用参数，即矿物静电位和矿物颗粒表面动电位来计算硫化矿物的费米能级和边缘能级的简便方法。
The simple methods are put forward to calculate Fermi level and edge level of sulfide mineral by means of potential of mineral electrode and zeta potential of mineral surface.
提出采用矿物浮选常用参数，即矿物静电位和矿物颗粒表面动电位来计算硫化矿物的费米能级和边缘能级的简便方法。
The simple methods are put forward to calculate Fermi level and edge level of sulfide mineral by means of potential of mineral electrode and zeta potential of mineral surface.
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